Visible- and solar-blind photodetectors using AlGaN high electron mobility transistors with nanodot-based floating gate

Andrew M. Armstrong; Brianna A. Klein; Andrew A. Allerman; Albert G. Baca; Mary H. Crawford; Jacob Podkaminer; Carlos R. Perez; Michael P. Siegal; Erica A. Douglas; Vincent M. Abate; Francois Leonard

doi:10.1364/PRJ.7.000B24

Photonics Research, Volume. 7, Issue 6, B24(2019)

Visible- and solar-blind photodetectors using AlGaN high electron mobility transistors with nanodot-based floating gate

Andrew M. Armstrong^1、*, Brianna A. Klein¹, Andrew A. Allerman¹, Albert G. Baca¹, Mary H. Crawford¹, Jacob Podkaminer^1,2, Carlos R. Perez¹, Michael P. Siegal¹, Erica A. Douglas¹, Vincent M. Abate¹, and Francois Leonard³

Author Affiliations

¹Sandia National Laboratories, Albuquerque, New Mexico 87185, USA

²Current address: 3M Corporate Research Labs, St. Paul, Minnesota 55144, USA

³Sandia National Laboratories, Livermore, California 94550, USA

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Andrew M. Armstrong, Brianna A. Klein, Andrew A. Allerman, Albert G. Baca, Mary H. Crawford, Jacob Podkaminer, Carlos R. Perez, Michael P. Siegal, Erica A. Douglas, Vincent M. Abate, Francois Leonard, "Visible- and solar-blind photodetectors using AlGaN high electron mobility transistors with nanodot-based floating gate," Photonics Res. 7, B24 (2019)

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Paper Information

Category: Semiconductor UV Photonics

Received: Jan. 28, 2019

Accepted: Apr. 4, 2019

Published Online: May. 17, 2019

The Author Email: Andrew M. Armstrong (aarmstr@sandia.gov)

DOI:10.1364/PRJ.7.000B24

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology