High Power Laser and Particle Beams, Volume. 37, Issue 6, 065002(2025)

Response characteristics of intrinsic back-illuminated lateral silicon carbide photoconductive switches

Kerun Lu, Fuyin Liu, Ripin Wang, Yuchen Liu, Langning Wang, and Tao Xun*
Author Affiliations
  • College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
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    Figures & Tables(8)
    Schematic diagram of simulation model and circuit
    Comparison of photocurrent output under different beam widths
    Comparison of photocurrent amplitude under front and back illumination with different substrate thicknesses
    Typical simulation waveforms under front and back illumination with a 10 kW peak optical power and equivalent circuit of planar devices
    Schematic diagram of current distribution inside the device
    Comparison of surface current density and electric field intensity in devices
    Schematic diagram of the test device and the experimental platform
    Comparison of output amplitude and typical waveform
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    Kerun Lu, Fuyin Liu, Ripin Wang, Yuchen Liu, Langning Wang, Tao Xun. Response characteristics of intrinsic back-illuminated lateral silicon carbide photoconductive switches[J]. High Power Laser and Particle Beams, 2025, 37(6): 065002

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    Paper Information

    Category:

    Received: Dec. 3, 2024

    Accepted: Mar. 17, 2025

    Published Online: Jun. 23, 2025

    The Author Email: Tao Xun (xtao_0301@hotmail.com)

    DOI:10.11884/HPLPB202537.240412

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