High Power Laser and Particle Beams, Volume. 37, Issue 6, 065002(2025)
Response characteristics of intrinsic back-illuminated lateral silicon carbide photoconductive switches
Fig. 2. Comparison of photocurrent output under different beam widths
Fig. 3. Comparison of photocurrent amplitude under front and back illumination with different substrate thicknesses
Fig. 4. Typical simulation waveforms under front and back illumination with a 10 kW peak optical power and equivalent circuit of planar devices
Fig. 5. Schematic diagram of current distribution inside the device
Fig. 6. Comparison of surface current density and electric field intensity in devices
Fig. 7. Schematic diagram of the test device and the experimental platform
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Kerun Lu, Fuyin Liu, Ripin Wang, Yuchen Liu, Langning Wang, Tao Xun. Response characteristics of intrinsic back-illuminated lateral silicon carbide photoconductive switches[J]. High Power Laser and Particle Beams, 2025, 37(6): 065002
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Received: Dec. 3, 2024
Accepted: Mar. 17, 2025
Published Online: Jun. 23, 2025
The Author Email: Tao Xun (xtao_0301@hotmail.com)