Acta Optica Sinica, Volume. 29, Issue 11, 3152(2009)
Study on the Electronic Structure and Optical Properties of Ru2Si3 Epitaxial on Si(001)
[1] [1] E.Borisenko V,B.Filonv A.Semiconducting Silicides [M].New York:Springer-Verlag,2001.1-5
[2] [2] Z.Liu,M.Watanabe,M.Hanabusa.Electrical and photovoltaic properties of iron-silicidel silicon heterostructures formed by pulsed laser deposition [J].Thin Solid Films,2001,381(2):262-266
[4] [4] D.Lenssen,D.Guggi,H.L.Bay et al..Epitaxial orientation of MBE grown Ru2Si3 films on Si(111) and Si(001)[J].Thin.Solid.Films,2000,368:15-21
[5] [5] D.Lenssen,S.Lenk,H.L.Bay et al..Molecular beam epitaxy of Ru2Si3 on silicon[J].Thin.Solid.Films,2000,371:66-71
[6] [6] D.Lenssen,R.Carius,S.Mesters et al..Structural,electrical and optical characterization of semiconducting Ru2Si3[J].Microelectronic Engineering,2000,50:243-248
[7] [7] D.J.Poutcharovsky,E.Parthe′.The orthorhombic crystal structure of Ru2Si3,Ru2Ge3,Os2Si3 an Os2Ge3[J].Acta Crystallogr,1974,30:2692-2696
[8] [8] V.L.Shaposhnikov,L.I.Ivanenko,D.B.Migas et al..Optical properties of semiconducting Ru2Si3[J].Optical Materials,2001,17:339-341
[11] [11] M.D.Segall,J.D.Philip Lindan,M.J.Probert et al..First-principles simulation:ideas,illustrations and the CASTEP code[J].J.Phys:Condense.Matter,2002,14(11):2717-2720
[12] [12] C.G.Broyden.The convergence of a class of double-rank minimization algorithms:2.The New Algorithm[J].Journal of the Institute for Mathematics and Applications,1970,6:222-231
[13] [13] R.Fletcher.A new approach to variable metric algorithms[J].Computer Journal,1970,13(3):317-322
[14] [14] D.Goldfarb.A family of variable-metric methods derived by variational means[J].Mathematics of Computation,1970,24(109):23-26
[15] [15] D.F.Shanno.Conditioning of quasi-newton methods for function minimization[J].Mathematics of Computation,1970,24:647-656
[16] [16] D.Vanderbilt.Soft self-consistent pseudopotentials in a generalized eigenvalue formalism[J].Phys.Rev.B,1990,41:7892-7895
[17] [17] H.J.Monkhorst,J.D.Pack.Special points for brillouin-zone integrations[J].Phys.Rev.B,1976,13:5188-5192
[18] [18] W.Henrion,M.Rebien et al..Optical interband spectra and band structure of Ru2Si3 and Ru2Ge3[J].Thin.Solid.Films,2000,364:171-17
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Cui Dongmeng, Xie Quan, Chen Qian, Zhao Fengjuan, Li Xuzhen. Study on the Electronic Structure and Optical Properties of Ru2Si3 Epitaxial on Si(001)[J]. Acta Optica Sinica, 2009, 29(11): 3152
Category: Materials
Received: Mar. 6, 2009
Accepted: --
Published Online: Nov. 16, 2009
The Author Email: Dongmeng Cui (2007_cdm_1108@sina.com)