Recent advances in germanium emission [Invited]

P. Boucaud; M. El Kurdi; A. Ghrib; M. Prost; M. de Kersauson; S. Sauvage; F. Aniel; X. Checoury; G. Beaudoin; L. Largeau; I. Sagnes; G. Ndong; M. Chaigneau; R. Ossikovski

doi:10.1364/PRJ.1.000102

Photonics Research, Volume. 1, Issue 3, 102(2013)

Recent advances in germanium emission [Invited]

P. Boucaud^1、*, M. El Kurdi¹, A. Ghrib¹, M. Prost², M. de Kersauson¹, S. Sauvage¹, F. Aniel¹, X. Checoury¹, G. Beaudoin³, L. Largeau³, I. Sagnes³, G. Ndong⁴, M. Chaigneau⁴, and R. Ossikovski⁴

Author Affiliations

¹Institut d’Electronique Fondamentale, CNRS—Univ. Paris Sud 11, Batiment 220, F-91405 Orsay, France

²Institut d’Electronique Fondamentale, CNRS—Univ. Paris Sud 11, Batiment 220, F-91405 Orsay, France

³Laboratoire de Photonique et de Nanostructures, CNRS—UPR 20, Route de Nozay 91460 Marcoussis, France

⁴Laboratoire de Physique des Interfaces et des Couches Minces, CNRS—Ecole polytechnique, F-91128 Palaiseau, France

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CLP Journals

[1] David S. Sukhdeo, Donguk Nam, Ju-Hyung Kang, Mark L. Brongersma, and Krishna C. Saraswat, "Direct bandgap germanium-on-silicon inferred from 5.7% <100> uniaxial tensile strain [Invited]," Photonics Res. 2, A8 (2014)

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P. Boucaud, M. El Kurdi, A. Ghrib, M. Prost, M. de Kersauson, S. Sauvage, F. Aniel, X. Checoury, G. Beaudoin, L. Largeau, I. Sagnes, G. Ndong, M. Chaigneau, R. Ossikovski, "Recent advances in germanium emission [Invited]," Photonics Res. 1, 102 (2013)

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Paper Information

Category: Silicon Photonics

Received: Mar. 29, 2013

Accepted: Jun. 21, 2013

Published Online: Jan. 18, 2019

The Author Email: P. Boucaud (philippe.boucaud@ief.u-psud.fr)

DOI:10.1364/PRJ.1.000102

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology