A novel auxiliary ion source with a dual-chamber structure featuring a heated filament was proposed and designed in this study. This innovation overcomes the limitations of current filament-based ion sources, which cannot accommodate oxidative gases as process gases or support extended filament operation time. The ion source presented herein is suitable for the assisted fabrication of oxide films and fulfills certain functions of an activator. To validate the efficacy of proposed ion source, a series of experiments were designed. Two common oxide films utilized in optoelectronics-tantalum pentoxide (Ta₂O₅) and silicon dioxide (SiO₂) were selected as the deposition materials. By systematically adjustmenting the parameters, including the ion source's current, voltage, bias, and the flow rate of the working gas, as well as employing spectrophotometric techniques to quantify the optical characteristics such as the transmissivity, refractive index, and absorbance of deposited films, the effects of these parameters on the optical properties of the films were investigated. Experiment results conclusively affirm the effectiveness of the ion source design, where its ability to enhance the quality of the resultant films is demonstrated.