III-nitride based ultraviolet laser diodes

Journal of Semiconductors, Volume. 40, Issue 12, 120402(2019)

Degang Zhao^1,2

¹State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

²Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

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Fig. 1. Typical epitaxial layer structure of AlGaN-based UV laser diodes.

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Degang Zhao. III-nitride based ultraviolet laser diodes[J]. Journal of Semiconductors, 2019, 40(12): 120402

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Published Online: Sep. 22, 2021

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