Optics and Precision Engineering, Volume. 32, Issue 5, 643(2024)

Fabrications and characteristics of Ga-doped ZnO microrods ultraviolet photodetectors

Zhaolin YUAN1,2,3、*, Yongwei WU1, Luyao YU1, Jianfeng HE1,2,3, Nengchang XU1, Xueyuan WANG1,2,3, and Pengfei LU1,2,3
Author Affiliations
  • 1School of Information Engineering, East China University of Technology, Nanchang33003, China
  • 2School of Software, East China University of Technology, Nanchang330013, China
  • 3Jiangxi Engineering Technology Research Center of Nuclear Geoscience Data Science and System, Nanchang001, China
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    Figures & Tables(10)
    Schematic diagram of ZnO∶Ga microrods UV photodetector
    XRD patterns of ZnO∶Ga microrods with different Ga doping concentrations
    SEM images of ZnO∶Ga microrods with different Ga doping concentrations and EDS pattern of ZnO∶Ga microrods with 1% Ga doping
    TEM images of ZnO∶Ga microrods with 1% Ga doping
    I-V characteristics of ZnO∶Ga microrods UV photodetectors with different Ga doping concentrations in dark and under UV illumination
    I-t characteristics of ZnO∶Ga microrods UV photoetectors with different Ga doping concentrations by turning on and off UV light periodically
    One typical response-decay period of ZnO∶Ga microrods UV photodetectors with different Ga doping concentrations
    • Table 1. Position of 2θ angle of main diffraction peaks for ZnO∶Ga microrods with different Ga doping concentrations

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      Table 1. Position of 2θ angle of main diffraction peaks for ZnO∶Ga microrods with different Ga doping concentrations

      Ga掺杂

      浓度/%

      2θ/(°)
      (100)(002)(101)
      031.7434.4036.24
      0.531.7234.4036.22
      131.7634.4236.26
      231.7434.4236.24
      431.7634.4236.24
    • Table 2. Performance parameters of ZnO∶Ga microrods UV photodetectors with different Ga doping concentrations

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      Table 2. Performance parameters of ZnO∶Ga microrods UV photodetectors with different Ga doping concentrations

      Ga掺杂

      浓度/%

      光电流(5 V)

      /μA

      响应度(5 V)

      /(A·W-1

      增益

      (5 V)

      比探测率

      (5 V)/Jones

      响应时间/s衰减时间/s
      013.560.531.802.94×101152.960.7
      0.57.180.280.957.84×101142.148.4
      1105.5513.1344.633.31×101212.336.4
      215.180.592.012.07×101241.042.9
      431.551.234.195.92×101251.684.4
    • Table 3. Comparison of main performance parameters among 1% Ga-dopted ZnO∶Ga microrods UV photodetector and several metal-doped ZnO UV photodetectors reported in recent works

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      Table 3. Comparison of main performance parameters among 1% Ga-dopted ZnO∶Ga microrods UV photodetector and several metal-doped ZnO UV photodetectors reported in recent works

      光敏材料响应度/(A·W-1比探测率/Jones响应时间/s衰减时间/s
      ZnO∶Al films385.631.8×10123036
      ZnO∶Fe films390.1964.95×1010--
      ZnO∶Ga nanosheets320.87-3443
      ZnO∶Ga nanorods28--29.7589.67
      ZnO∶Ga microrods13.133.31×101212.336.4
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    Zhaolin YUAN, Yongwei WU, Luyao YU, Jianfeng HE, Nengchang XU, Xueyuan WANG, Pengfei LU. Fabrications and characteristics of Ga-doped ZnO microrods ultraviolet photodetectors[J]. Optics and Precision Engineering, 2024, 32(5): 643

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    Paper Information

    Category:

    Received: Aug. 2, 2023

    Accepted: --

    Published Online: Apr. 2, 2024

    The Author Email: Zhaolin YUAN (yzlyx98@sina.com)

    DOI:10.37188/OPE.20243205.0643

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