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Acta Physica Sinica, Volume. 69, Issue 9, 093601-1(2020)

Design and application of gas cluster accelerator for surface smoothing and nanostructures formation

Xiao-Mei Zeng1、*, Pelenovich Vasiliy2、*, Rakhimov Rakhim1, Wen-Bin Zuo1, Bin Xing2, Jin-Bao Luo1, Xiang-Yu Zhang1, and De-Jun Fu1、*
Author Affiliations
  • 1School of Physical Science and Technology, Wuhan University, Wuhan 430072, China
  • 2School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072, China
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    AbstractGet PDF(in Chinese)
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    Figures & Tables(8)
    Image of the GCIB accelerator.

    Fig. 1. Image of the GCIB accelerator.

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    Working principle and structure diagram of gas cluster ion accelerator.

    Fig. 2. Working principle and structure diagram of gas cluster ion accelerator.

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    AFM surface topography of single crystal silicon wafer: (a) Before cleaning; (b) after chemical cleaning; (c) after cluster cleaning.

    Fig. 3. AFM surface topography of single crystal silicon wafer: (a) Before cleaning; (b) after chemical cleaning; (c) after cluster cleaning.

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    One dimensional PSD curves of AFM images of single crystal silicon wafer.

    Fig. 4. One dimensional PSD curves of AFM images of single crystal silicon wafer.

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    AFM images of single crystal ZnO substrates before and after Ar GCIB irradiation at different incident angles (energy, 10 keV; dose, 4 × 1016 ions/cm2; arrows indicate the direction of ion beam bombardment): (a) Before cluster irradiation; (b) 30°; (c) 45°; (d) 60°

    Fig. 5. AFM images of single crystal ZnO substrates before and after Ar GCIB irradiation at different incident angles (energy, 10 keV; dose, 4 × 1016 ions/cm2; arrows indicate the direction of ion beam bombardment): (a) Before cluster irradiation; (b) 30°; (c) 45°; (d) 60°

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    Two-dimensional PSD images of single crystal ZnO substrates before and after Ar GCIB irradiation at different incident angles (energy, 10 keV; dose, 4 × 1016 ions/cm2; arrows indicate the direction of ion beam bombardment): (a) Before cluster irradiation; (b) 30°; (c) 45°; (d) 60°.

    Fig. 6. Two-dimensional PSD images of single crystal ZnO substrates before and after Ar GCIB irradiation at different incident angles (energy, 10 keV; dose, 4 × 1016 ions/cm2; arrows indicate the direction of ion beam bombardment): (a) Before cluster irradiation; (b) 30°; (c) 45°; (d) 60°.

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    SEM images of ZnO nanorods before and after Ar GCIB irradiation at different cluster energy and dose: (a) Before cluster irradiation; (b) 5 keV, 4 × 1016 ions/cm2; (c) 10 keV, 2 × 1016 ions/cm2; (d) 10 keV, 4 × 1016 ions/cm2.

    Fig. 7. SEM images of ZnO nanorods before and after Ar GCIB irradiation at different cluster energy and dose: (a) Before cluster irradiation; (b) 5 keV, 4 × 1016 ions/cm2; (c) 10 keV, 2 × 1016 ions/cm2; (d) 10 keV, 4 × 1016 ions/cm2.

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    • Table 1. [in Chinese]

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      Table 1. [in Chinese]

      入射角
      30°45°60°
      y轴 y轴 x轴 y轴
      最强频率/μm–12624
      波纹波长λ/μm 0.50.1670.50.25
      平均波纹数量N10301020
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    Xiao-Mei Zeng, Pelenovich Vasiliy, Rakhimov Rakhim, Wen-Bin Zuo, Bin Xing, Jin-Bao Luo, Xiang-Yu Zhang, De-Jun Fu. Design and application of gas cluster accelerator for surface smoothing and nanostructures formation[J]. Acta Physica Sinica, 2020, 69(9): 093601-1

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    Paper Information

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    Received: Dec. 28, 2019

    Accepted: --

    Published Online: Nov. 26, 2020

    The Author Email: Vasiliy Pelenovich (pelenovich@mail.ru), Fu De-Jun (djfu@whu.edu.cn)

    DOI:10.7498/aps.69.20191990

    Topics

    Nuclear physics
    Particles and fields
    Particle and nuclear astrophysics and cosmology