Fig. 1. Schematic diagram of measurement based on laser rotation heating

Fig. 2. Design scheme of high temperature spectral emissivity measurement device

Fig. 3. Design drawing of sample spectral radiation and temperature field microscopic imaging measurement system

Fig. 4. Temperature field distribution diagram of the silicon carbide sample after entering the steady state

Fig. 5. Spectral emissivity measurement error introduced by sample unequal temperature

Fig. 6. Diagram of high-temperature spectral emissivity measurement device based on laser heating

Fig. 7. Measurement results of silicon carbide high temperature normal spectral emissivity
(a): Normal spectral emissivity of typical spectral points (1 000 K); (b): Normal spectral emissivity of typical temperature points (4 μm)

Fig. 8. Comparison of measurement results of silicon carbide normal spectral emissivity (1 000 K)