High Power Laser and Particle Beams, Volume. 35, Issue 10, 105004(2023)

Influence of the width of triggering region on output characteristics of GaAs photoconductive semiconductor switch

Hong Chen, Jinhong Wei, Fanzheng Zeng, Chenglin Jia, Zebin Fu, Song Li*, and Baoliang Qian
Author Affiliations
  • College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
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    Figures & Tables(9)
    GaAs PCSS analog circuit
    Electric field distribution of PCSS in the delay stage and the switching stage when W=3 μm
    PCSS current response with time when W=3 μm
    Delay time and switching time of PCSS at different W
    Electric field distribution of PCSS at different W when t=1.3 ns
    Carrier concentration distribution of PCSS at different W when t=1.3 ns
    Delay time and switching time of PCSS triggering at anode and cathode at different W
    When W=4 μm and t=1.5 ns, the electric field distribution of PCSS when anode or cathode is triggered
    • Table 1. At t=1.3 ns, the average carrier concentration on the surface of PCSS and the maximum peak field intensity in the domain at different W

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      Table 1. At t=1.3 ns, the average carrier concentration on the surface of PCSS and the maximum peak field intensity in the domain at different W

      width of the trigger region/μm average carrier concentration/(1015 cm−3) maximum peak electric field within the domain/(kV/cm)
      20.7372
      31.00149
      41.85250
      52.31375
      68.77381
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    Hong Chen, Jinhong Wei, Fanzheng Zeng, Chenglin Jia, Zebin Fu, Song Li, Baoliang Qian. Influence of the width of triggering region on output characteristics of GaAs photoconductive semiconductor switch[J]. High Power Laser and Particle Beams, 2023, 35(10): 105004

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    Paper Information

    Category: Pulsed Power Technology

    Received: May. 11, 2023

    Accepted: Aug. 30, 2023

    Published Online: Nov. 30, 2023

    The Author Email: Li Song (song_li206@163.com)

    DOI:10.11884/HPLPB202335.230123

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