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Frontiers of Optoelectronics, Volume. 6, Issue 4, 448(2013)

Lasing characteristics of curved semiconductor nanowires

Weisong YANG1, Yipei WANG1, Yaoguang MA2, Chao MENG1, Xiaoqin WU1, and Qing YANG1、*
Author Affiliations
  • 1State Key Laboratory of Modern Optical Instrumentation, Department of Optical Engineering, Zhejiang University, Hangzhou 310027, China
  • 2State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871, China
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    Weisong YANG, Yipei WANG, Yaoguang MA, Chao MENG, Xiaoqin WU, Qing YANG. Lasing characteristics of curved semiconductor nanowires[J]. Frontiers of Optoelectronics, 2013, 6(4): 448

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    Paper Information

    Category: RESEARCH ARTICLE

    Received: May. 23, 2013

    Accepted: Jun. 19, 2013

    Published Online: Mar. 3, 2014

    The Author Email: Qing YANG (qingyang@zju.edu.cn)

    DOI:10.1007/s12200-013-0344-8

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology