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Laser & Optoelectronics Progress, Volume. 62, Issue 9, 0916002(2025)

Investigation on Properties of High Color Rendering White Light-Emitting Diode Based on CdSe/ZnS and Carbon Quantum Dot

Pei Zhang1,2、*, Mengmeng Li2, Jialiang Wang2, Xiaotian Li1, Xiaobing Chen1, Xiang Gao1, and Linjiao Ren2、**
Author Affiliations
  • 1Nantong South Light Electronic Material Co., Ltd., Nantong 226001, Jiangsu , China
  • 2College of Electric Information Engineering, Zhengzhou University of Light Industry, Zhengzhou 450002, Henan , China
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    AbstractGet PDF(in Chinese)
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    Figures & Tables(10)
    Physical images and structural diagrams of the WLED device. (a) The casing and lens of the LED; (b) the WLED device; (c) 370 nm UV LED chip; (d)(e) schematic diagrams of single-layer and bilayer WLED device structures

    Fig. 1. Physical images and structural diagrams of the WLED device. (a) The casing and lens of the LED; (b) the WLED device; (c) 370 nm UV LED chip; (d)(e) schematic diagrams of single-layer and bilayer WLED device structures

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    TEM and HRTEM images of CQD with CdSe/ZnS. (a) TEM image of CQD; (b) HRTEM image of CQD; (c) TEM image of CdSe/ZnS QD; (d) HRTEM image of CdSe/ZnS QD

    Fig. 2. TEM and HRTEM images of CQD with CdSe/ZnS. (a) TEM image of CQD; (b) HRTEM image of CQD; (c) TEM image of CdSe/ZnS QD; (d) HRTEM image of CdSe/ZnS QD

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    Absorbance and PL spectra of CQD and CdSe/ZnS QD solutions

    Fig. 3. Absorbance and PL spectra of CQD and CdSe/ZnS QD solutions

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    Optical properties of the CQD-WLED device. (a) CIE1931 chromaticity diagram of the LED device with different CQD contents; (b) EL spectra and emission image of the CQD-WLED device; (c) EL spectra of the CQD-WLED device at different irradiation times (the inset shows the normalized EL intensity at different illumination times)

    Fig. 4. Optical properties of the CQD-WLED device. (a) CIE1931 chromaticity diagram of the LED device with different CQD contents; (b) EL spectra and emission image of the CQD-WLED device; (c) EL spectra of the CQD-WLED device at different irradiation times (the inset shows the normalized EL intensity at different illumination times)

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    Optical properties of the bilayer WLED device. (a) CIE 1931 chromaticity diagram of the WLED device; (b) EL spectra and emission image of the WLED device; (c) EL spectra of the WLED device at different CdSe/ZnS QD∶OSTE mass ratios

    Fig. 5. Optical properties of the bilayer WLED device. (a) CIE 1931 chromaticity diagram of the WLED device; (b) EL spectra and emission image of the WLED device; (c) EL spectra of the WLED device at different CdSe/ZnS QD∶OSTE mass ratios

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    Optical properties of the bilayer WLED device under different driving currents. (a) EL spectra; (b) CRI; (c) CCT

    Fig. 6. Optical properties of the bilayer WLED device under different driving currents. (a) EL spectra; (b) CRI; (c) CCT

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    The stability of the bilayer WLED device under ultraviolet light irradiation. (a) EL spectra (the inset shows the normalized EL intensity at different illumination times); (b) CRI; (c) CCT

    Fig. 7. The stability of the bilayer WLED device under ultraviolet light irradiation. (a) EL spectra (the inset shows the normalized EL intensity at different illumination times); (b) CRI; (c) CCT

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    • Table 1. The CRI, CCT, and CIE coordinates of the WLED device at different CQD∶OSTE mass ratios

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      Table 1. The CRI, CCT, and CIE coordinates of the WLED device at different CQD∶OSTE mass ratios

      NumberMass ratioCRICCT/KCIE （x， y）
      11∶6.572.67597（0.282， 0.369）
      21∶6.180.07570（0.288， 0.352）
      31∶5.777.46507（0.305， 0.379）
      41∶5.377.35595（0.329， 0.405）
      51∶5.077.05793（0.323， 0.403）

    • Table 2. CRI, CCT, and CIE coordinates of the WLED device at different CdSe/ZnS QD∶OSTE mass ratios

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      Table 2. CRI, CCT, and CIE coordinates of the WLED device at different CdSe/ZnS QD∶OSTE mass ratios

      NumberMass ratioCRICCT/KCIE （x， y）
      11∶6.290.25056（0.347， 0.400）
      21∶5.892.35478（0.333， 0.382）
      31∶5.492.65098（0.344， 0.381）
      41∶5.191.44791（0.354， 0.377）
      51∶4.882.34231（0.370， 0.368）

    • Table 3. CRI, CCT, CIE coordinates, and LE of different WLED devices

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      Table 3. CRI, CCT, CIE coordinates, and LE of different WLED devices

      Composition of phosphor layerCRICCT /KCIE （x， y）LE /（lm W-1）Reference
      CQD+ CdTe QD87（0.38， 0.36）~30［15］
      CD+ CdS QD719051（0.27， 0.32）［27］
      CQD+CdTe QD +CdTe QD715748（0.327，0.334）［22］
      CD+ CdSe/ZnS QD6250（0.32，0.31）［28］
      CD+ CdTe@CaCO3 QD89.14850（0.3514，0.3715）［7］
      CD+ CdSe/ZnS QD92.65098（0.344，0.381）6.7This work
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    Pei Zhang, Mengmeng Li, Jialiang Wang, Xiaotian Li, Xiaobing Chen, Xiang Gao, Linjiao Ren. Investigation on Properties of High Color Rendering White Light-Emitting Diode Based on CdSe/ZnS and Carbon Quantum Dot[J]. Laser & Optoelectronics Progress, 2025, 62(9): 0916002

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    Paper Information

    Category: Materials

    Received: Aug. 29, 2024

    Accepted: Oct. 8, 2024

    Published Online: Apr. 23, 2025

    The Author Email: Pei Zhang (zhangpei@zzuli.edu.cn), Linjiao Ren (renlinjiao@zzuli.edu.cn)

    DOI:10.3788/LOP241926

    CSTR:32186.14.LOP241926

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology