Acta Photonica Sinica, Volume. 53, Issue 7, 0753305(2024)

Preparation and Properties of PEN Substrate Gallium Oxide Based Flexible Ultraviolet Detector (Invited)

Yue DING1, Qianqian HUANGFU1, Qingyuan ZUO1, Jinlong LIANG1, Wei MI1、*, Di WANG1, Xingcheng ZHANG2, Zhen LIU3, and Linan HE1、**
Author Affiliations
  • 1School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
  • 2Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
  • 3Tianjin EF Semiconductor Technology Co., LTD., Tianjin 300382, China
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    Figures & Tables(12)
    Flowchart of preparation of flexible gallium oxide UV detector
    Sample placement diagram
    XRD θ-2θ spectra of bare PEN substrate and Ga2O3 films grown on PEN substrate
    XPS spectra of the prepared Ga2O3 film
    The transmission spectrum of Ga2O3 film on PEN substrate and single PEN sample
    Spectral response of flexible gallium oxide photodetector at 200~400 nm
    SEM images of the prepared sample surface
    I-V characteristic curve of Ga2O3 UV detector before and after 20 000 bending
    I-t characteristic curve of the Ga2O3 UV detector's switching response to 254 nm UV light under a bias voltage of 10 V after 20 000 times bending
    Switching time fitting of the Ga2O3 UV detector after 20 000 times bending
    • Table 1. Process parameters for growing Ga2O3 films on PEN substrates

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      Table 1. Process parameters for growing Ga2O3 films on PEN substrates

      ProjectParameter
      Sputtering temperature of Ga2O325 ℃
      Argon flow58.7 sccm
      Oxygen flow0.6 sccm
      Reaction chamber pressure8 mTorr
      Sputtering power100 W
      Sputtering time60 min
    • Table 2. Process parameters of the ITO electrodes grown on Ga2O3 films

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      Table 2. Process parameters of the ITO electrodes grown on Ga2O3 films

      ProjectParameter
      Sputtering temperature of ITO25 ℃
      Argon flow53 sccm
      Oxygen flow1.3 sccm
      Reaction chamber pressure3.75 mTorr
      Sputtering power80 W
      Sputtering time40 min
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    Yue DING, Qianqian HUANGFU, Qingyuan ZUO, Jinlong LIANG, Wei MI, Di WANG, Xingcheng ZHANG, Zhen LIU, Linan HE. Preparation and Properties of PEN Substrate Gallium Oxide Based Flexible Ultraviolet Detector (Invited)[J]. Acta Photonica Sinica, 2024, 53(7): 0753305

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    Paper Information

    Category: Special Issue for Photodetectors

    Received: Mar. 27, 2024

    Accepted: May. 28, 2024

    Published Online: Aug. 12, 2024

    The Author Email: Wei MI (miwei@tjlgdx.wecom.work), Linan HE (hla_tjut@126.com)

    DOI:10.3788/gzxb20245307.0753305

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