Laser & Optoelectronics Progress, Volume. 61, Issue 23, 2300007(2024)

Research Progress on Anti-Radiation Properties of Specialized Optical Fibers

Wen Hu1...2,*, Meisong Liao2, Lu Deng2, Chongyun Shao2, Siyu Li1 and Anlian Pan1 |Show fewer author(s)
Author Affiliations
  • 1College of Materials Science and Engineering, Hunan University,Changsha 410082, Hunan , China
  • 2Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
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    Figures & Tables(11)
    Flow chart of color center generation induced by different types of particle irradiation of pure quartz fiber[7,11-12]
    Effect of core doping elements (Al,P,Ge) on RIA of quartz fiber at 1550 nm[13]
    Performance comparison chart[17]. (a) Relationship between radiation-induced transmission attenuation and cumulative radiation dose at 1080 nm; (b) relationship between slope efficiency and cumulative radiation dose
    RIA spectra of the EAG glass with different GeO2 doping concentration of silica glasses (inset: photographs of the EAG 0 and EAG 6 glasses before and after the irradiation)
    Light transmission spectra of fluorine-doped fiber and pure quartz fiber under moderate dose of γ-ray irradiation[27]
    Schematic of irradiated TDF being bleached by D2[32]
    Comparison of properties before and after bleaching[39]. (a) Relationship between output laser power and launched pump power at different γ-ray radiationdoses before and after bleaching; (b) relationship between optical-optical efficiency and γ-ray radiation doses
    Optical loss spectra of (a) raw fiber and (b) pre-treated fiber before and after 700 Gy irradiation[56-57]
    • Table 1. Method of doping elements for improving radiation resistance performance

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      Table 1. Method of doping elements for improving radiation resistance performance

      ReferenceFiber typeTreatment methodMechanismEffect
      1415Active optical fiberCe element dopingCe3+ influences the efficiency or thermal stability of P1 and phosphorus-oxygen hole center generationUnder a total dose of 900 Gy irradiation, Er/Yb co-doped fiber with Ce element doping exhibits a low degradation level (8%)
      16Active optical fiberCe element dopingCe3+ restricts the formation of P1 defectsEr-doped fiber co-doped with mass fraction of 0.6% Ce element shows only a 12% degradation in output power under 600 Gy irradiation, with almost no RIA under 300 Gy irradiation
      17Active optical fiberF,Ce element dopingCoexistence of Ce3+ and Ce4+ in the oxidation-reduction pair captures holes and electrons, preventing the formation of permanent color centers. F ions effectively absorb high-energy photonsAt a γ radiation dose of 200 Gy, the background loss of Yb-Al-P co-doped fiber is approximately 2.57 times that of Yb-Al-Ce-F co-doped fiber. Laser efficiency of Yb-Al-Ce-F co-doped fiber decreases to half of the pre-radiation level, while Yb-Al-P co-doped fiber decreases to 1/20
      18Active optical fiberP element dopingP element inhibits the formation of Al-OHC defectsUnder 85 Gy irradiation, Yb/Al co-doped fiber doped with P element shows only a 6% decrease in fiber laser efficiency
      19Active optical fiberGeO2 dopingGeODC has a stronger ability to capture holes, leading to a reduction in AlOHC defectsUnder X-ray irradiation at 50 Gy, Er-doped fiber with GeO2 doping shows only a 7% reduction in gain at 1557 nm. At 1100 Gy irradiation, a significant reduction in RIA at 1200 nm is observed
      20Active optical fiberAl2O3,P2O5,GeO2 co-dopingAl2O3 and P2O5 form AlPO4, further reducing RIA when co-doped with GeO2Under 3.0‒4.5 kGy irradiation, fiber co-doped with Al2O3 and P2O5 exhibits lower RIA compared to fibers co-doped with only Al2O3, and performance surpasses Al2O3/GeO2 co-doped fibers without P
      21Active optical fiberGe,Ce co-dopingGe、 Ce doping prevents the formation of Al-OHCUnder a γ radiation dose rate of 0.2 Gy/s, high Ge and high Ce doping significantly enhances the radiation tolerance of EDF
      23Active optical fiberEr,Yb,P co-dopingCe4+ competes with P2O3, the precursor that forms the P1 color center, which can reduce the formation of the P1 color centerRIA was 0.10 dB/m at 940 nm and 0.19 dB/m at 1550 nm at 300 Gy and 0.46 dB/m and 0.37 dB/m at 940 nm and 1550 nm, respectively, at 1000 Gy
      24Active optical fiberNanoparticle dopingNanoparticles embedded in the matrix enhance Si—O and Ge—O bond strength, while suppressing the formation of Al-OHC defectsActive fibers containing nanoparticles exhibit lower radiation-induced attenuation
      25Active optical fiberEr,Bi Co-dopingBi ions readily absorb γ rays, reducing the impact of radiation on Er ionsUnder 1500 Gy 60Co radiation, Bi/Er co-doped fiber at 1300 nm shows a 56% lower RIA compared to Er-doped fiber, with minimal changes in gain characteristics and laser threshold power before and after irradiation
      26Active optical fiberLa element dopingLa doping can replace Al as a dispersant of Er ions to a certain extentWhen the cumulative dose of 60Co irradiation was 1 kGy, the loss of La doped Er-doped fiber at 1200 nm was 0.03067 dB, which was lower than that of La-doped fiber
      27Passive optical fiberF element dopingF element suppresses the formation of E' color centersUnder a neutron fluence of 1×1023 nm-2 and a γ radiation dose of 1.6×109 Gy, the increase in transmission loss for F-doped fiber is only 1 dBm-1
      28Passive optical fiberF element dopingF element mitigates stress caused by Ge in the structure, reducing the content of NBOHCAfter 10 hours of irradiation at 10 kGy/h, RIA increase for Ge/F co-doped quartz fiber is only 3.733 dB/km
      29Passive optical fiberCe element dopingCe3+ acts as an electron donor, suppressing the generation of hole centersUnder 1 MGy irradiation, P/Ce co-doped fiber shows no decrease in radiation sensitivity with decreasing irradiation dose
    • Table 2. Post-treatment methods for improving radiation resistance performance

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      Table 2. Post-treatment methods for improving radiation resistance performance

      ReferenceFiber typeTreatment methodMechanismEffect
      31Active optical fiberLoading H2Hydrogen atoms easily form chemical bonds in the network structure, passivating radiation-induced dangling bonds, reducing RIABEDF loaded with H2 reduces RIA by over 40 dB /m compared to unloaded BEDF
      32Active optical fiberLoading H2,D2H/D ions react in SiO2 matrix, producing stable —OH, —OD bonds; defects related to free electrons and holes are eliminatedTm-doped fiber efficiency recovers to over 91.9% after loading H2 in the range of 185 Gy to 1000 Gy γ irradiation, almost complete disappearance of RIA, better deuterium loading effect
      33Active optical fiberPre-annealingLuminescence of BAC-Al decreases with increasing temperature during heating; higher thermal stability due to Al-OHC thermal bleachingBi/Er co-doped fiber, after electron irradiation at 140 kGy, annealed and cooled at 500 ℃, recovers 71.4% luminescence at 1190 nm
      3536Active optical fiber793 nm light bleachingAbsorption of photons by color centers, bleaching of defects, thermal generation of quantum defects, Tm3+ absorbs pump light and emits 2 μm laser, leading to thermal bleaching of color centersTm-doped fiber efficiency decreases after 500 Gy γ irradiation, recovers to 40.8% after 15 h of pump bleaching
      37Active optical fiber793 nm light bleachingAbsorption of photons by color centers, bleaching of defectsYb-doped fiber PD loss at 810 nm bleached by 68%, higher pump power results in faster bleaching, simultaneous pumping at 915 nm and 793 nm LD suppresses about 80% of PD loss
      38Active optical fiber830 nm light bleachingElectrons from 830nm light deactivate BAC-Si temporarily, leading to the recovery of BAC-Si luminescence. This is due to electrons escaping shallow trap centers, causing absorption.Bi/Er co-doped fiber absorption at 814 nm decreases after irradiation, increases by 0.57 dB after laser shutdown within 48 h, almost complete recovery of luminescence intensity two days after irradiation cessation
      39Active optical fiber976 nm light bleachingDefects capture or release electrons during bleachingAfter 465 min bleaching at 976 nm under 100 Gy, 255 Gy, and 395 Gy irradiation, the fiber’s slope efficiency increases by 20.8%, 24.25%, and 22.90%, respectively
      40Active optical fiber532 nm light bleachingAbsorption of photons by color centers, bleaching of defectsIn-situ bleaching at 532 nm restores Yb-doped fiber output power to 82%, increases the mode instability threshold to over 2.6 times, and improves efficiency from 37% to 63%
      41Passive optical fiberLoading H2H2 reacts with silicon to form stable hydroxyl groups in the core, reducing radiation-induced color centersLoading hydrogen gas before and after γ irradiation reduces induced losses and eliminates absorption peaks caused by radiation
      42Passive optical fiberLoading H2H2 passivates most POHC and P1-related absorption bands, while reducing Si-NBOHC defect concentrationCompared to untreated P-doped fiber, post-loading with H2 reduces fiber irradiation loss by over 10 times between pulses of 1‒100 s
      4344Passive optical fiberLoading O2O2 inhibits the generation of Ge(1) and Ge(2), suppressing the formation of Si/Ge color centersFor Ge-doped fibers irradiated at a dose of 1 MGy, RIA in samples loaded with O2 is half that of unloaded samples
      45Passive optical fiberPre-annealingAfter annealing, color center precursors are quenched, and quenching rate affects RIAUnder fast neutron irradiation, RIA of fibers pre-annealed at 150 ℃ is more than 5 times larger than those annealed at 300 ℃
      46Passive optical fiber1500 nm, 970 nm light bleaching970 nm light bleaching of high-energy STH-type defectsIncreasing probe power by 10 times significantly reduces saturation RIA for Ge-doped and F-doped fibers, injecting 970 nm light further inhibits RIA growth
    • Table 3. Hybrid treatment methods for improving radiation resistance performance

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      Table 3. Hybrid treatment methods for improving radiation resistance performance

      ReferenceFiber typeTreatment methodMechanismEffect
      48Active optical fiber

      Sealed carbon coating,

      H2-loaded

      Formation of stable —OH with H2, coating impedes H2 escapeRIA of H2-loaded Er-doped fiber is 3.3‒3.8 times lower than non-H2 fiber in the 750‒1700 nm range
      49Active optical fiber

      980 nm photobleaching,

      H2-loaded,

      sealed carbon coating

      Formation of stable —OH with H2, reduced color center concentration, coating restricts gas escape mechanismEstimated 30 times gain in the usage lifetime of EDF laser in space using H-loaded sealed coating fiber and 980 nm pump
      4950Active optical fiber

      Sealed carbon coating,

      H2-loaded

      Formation of stable —OH with H2, coating impedes H2 escapeAfter Co-source irradiation, the original Er-doped fiber exhibits a 5-fold increase in laser efficiency degradation compared to carbon-coated fibers, a 12-fold increase in laser threshold, and the RIA level of carbon-coated fibers is much lower than that of the original fibers
      5152Active optical fiber

      HACC,

      H2-loaded

      Formation of stable —OH with H2, gas escape mechanism restrictedUnder 3.15 kGy γ irradiation, Er-doped fiber post-treatment has 1/10 gain change compared to untreated fiber
      14Active optical fiber

      Ce element doping,

      H2-loaded

      Reduced generation or thermal stability of phosphorus-oxygen hole centers in NIR and P1 defects in IREr/Yb co-doped fiber doped with Ce and loaded with H2 has gain degradation of 0.2 dB, RIA below 0.05 dB/m at 915 nm and 1545 nm after 900 Gy radiation
      53Active optical fiber

      Pre-irradiation,

      annealing

      Induced defects migrate to higher energy sites, elimination of low-energy defectsTreated Er/Yb co-doped fiber shows approximately 0.16 dB/m improvement in radiation-induced losses compared to the original fiber, including 0.14 dB initial loss
      54Active optical fiber

      Ce element doping,

      photonic crystal fibers

      Lower concentration of Ge in the ECPCF core results in a lower concentration of permanent color centersIrradiation resistance of photonic crystal fibers is significantly better than that of double-clad fibers
      55Active optical fiber

      Ce element doping,

      915 nm photobleaching

      Reduced color center concentrationAfter 915 nm (43 W) pump photobleaching, Er/Yb co-doped fiber with Ce doping has less than 6% gain decay post-irradiation with a total dose of 1 kGy and dose rate of 0.0034 Gy/s
      5657Active optical fiber

      D2-loading,

      pre-irradiation,

      heat annealing

      Reduction of POHC color center precursors, Inhibition of P2 color center formation, Deuterium radicals react with POHC color centers and glass network forming stable P-OD, Si-OD bondsD2-loaded, pre-irradiated, and annealed Yb-doped fiber shows laser output power decay rate below 21% after 700 Gy irradiation at 1200 nm
      58Active optical fiber

      D2-loading,

      pre-irradiation

      D2 interacts with OH- forming stable Si-OD and Si-D, Deuterium radicals (D·) effectively bleach radiation-induced dangling bond defectsAfter D2 loading at 60 ℃ and 5 MPa for 72 h followed by X-ray irradiation with an accumulated dose of 2.4 kGy, the radiation-induced gain changes for original Er/Yb co-doped fiber and pre-treated fiber are 3.13 dB and 1.81 dB, respectively
      59Passive optical fiber

      Quenching,

      pre-irradiation,

      annealing

      High-temperature thermal processes eliminate radiation-induced defect structures (SiE' and NBOHC)Treated fiber shows weaker ESR signal, and all defect centers, including SiE' and NBOHC, have completely disappeared
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    Wen Hu, Meisong Liao, Lu Deng, Chongyun Shao, Siyu Li, Anlian Pan. Research Progress on Anti-Radiation Properties of Specialized Optical Fibers[J]. Laser & Optoelectronics Progress, 2024, 61(23): 2300007

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    Paper Information

    Category: Reviews

    Received: Apr. 3, 2024

    Accepted: Apr. 29, 2024

    Published Online: Dec. 17, 2024

    The Author Email:

    DOI:10.3788/LOP241021

    CSTR:32186.14.LOP241021

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