High‑Brightness Blue Semiconductor Laser Source Based on Grating Spectral Beam Combining

Linhui Guo; Quanwei Jiang; Hualing Wu; Hao Tan; Pengfei Xie; Yun Fu; Lanping Zhang; Yonggang Zhang; Songxin Gao; Deyong Wu; Chun Tang

doi:10.3788/CJL231211

Chinese Journal of Lasers, Volume. 51, Issue 13, 1301007(2024)

High‑Brightness Blue Semiconductor Laser Source Based on Grating Spectral Beam Combining

Linhui Guo^1,2, Quanwei Jiang^1,2, Hualing Wu^1,2, Hao Tan^1,2、*, Pengfei Xie^1,2, Yun Fu^1,2, Lanping Zhang^1,2, Yonggang Zhang^1,2, Songxin Gao^1,2, Deyong Wu^1,2, and Chun Tang^1,2

Author Affiliations

¹Institute of Applied Electronics, China Academy of Engineering Physics, Mianyang 621900, Sichuan , China

²Key Laboratory of High Energy Laser Science and Technology, Chinese Academy of Engineering Physics, Mianyang 621900, Sichuan , China

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Figures & Tables(14)

Fig. 1. Schematic of spectral beam-combining system

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Fig. 2. Power and voltage of laser chip versus current

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Fig. 3. Spectral characteristic of single 450 nm laser

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Fig. 4. Package structure of semiconductor laser array

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Fig. 5. Experimental light path layout

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$Diffraction efficiency of grating$

Fig. 6. Diffraction efficiency of grating

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Fig. 7. Pointing error and divergence angle curves after collimation. (a) Pointing error; (b) divergence angle after collimation

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Fig. 8. Crosstalk effect and filtered far-field spot. (a) Crosstalk effect; (b) filtered far-field spot

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Fig. 9. Design diagram of filtering system and experimental setup. (a) Design diagram of filtering system; (b) experimental setup

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Fig. 10. Power,E-O efficiency, and voltage versus current and output spectra. (a) Power,E-O efficiency,and voltage; (b) output spectra

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Fig. 11. Central wavelength and spectral width distribution

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Fig. 12. Beam quality after spectral beam combining

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Table 1. Parameters of blue semiconductor laser chip

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Table 1. Parameters of blue semiconductor laser chip

Parameter	Value
Wavelength /nm	447
Chip width /nm θ_slow /（°） θ_fast /（°）	0.15 9 49
Cavity length /mm	1.2
Emitter width /μm	40
Rear facet reflectivity of emitter /%	96
Degree of polarization under transverse electric mode /%	96

Table 2. Near field spot of combining laser unit
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Table 2. Near field spot of combining laser unit
Parameter LD 1 LD 2 LD 3 LD 4 LD 5 LD6 LD 7 LD8 LD 9
Near field spot
Width along fastaxis /μm 368 422 449 630 575 552 535 656 588

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Linhui Guo, Quanwei Jiang, Hualing Wu, Hao Tan, Pengfei Xie, Yun Fu, Lanping Zhang, Yonggang Zhang, Songxin Gao, Deyong Wu, Chun Tang. High‑Brightness Blue Semiconductor Laser Source Based on Grating Spectral Beam Combining[J]. Chinese Journal of Lasers, 2024, 51(13): 1301007

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