INFRARED, Volume. 44, Issue 8, 28(2023)

Study on Surface Passivation of Silicon-based HgCdTe Infrared Detector

Yong-xi DAI, Bin HE, Tian-liang ZHENG, Ti NING, Qian LI, and Yu-zhu ZHANG
Author Affiliations
  • [in Chinese]
  • show less
    References(4)

    [3] [3] Rogalski A. Recent Progress in Infrared Detector Technologies[J]. Infrared Physics and Technology, 2011, 54(3): 136-154.

    [6] [6] Nemirovsky Y, Bahir G. Passivation of Mercury Cadmium Telluride Surface [J]. Journal of Vacuum Science and Technology, 1989, 7(2): 450-459.

    [7] [7] Yuan S X,He L,Yu J,et al. Infrared Photoconductor Fabricated with a Molecular Beam Epitaxially Grown CdTe/HgCdTe Heterostructure[J]. Applied Physics Letters, 1991, 58(3): 914-916.

    Tools

    Get Citation

    Copy Citation Text

    DAI Yong-xi, HE Bin, ZHENG Tian-liang, NING Ti, LI Qian, ZHANG Yu-zhu. Study on Surface Passivation of Silicon-based HgCdTe Infrared Detector[J]. INFRARED, 2023, 44(8): 28

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category:

    Received: Nov. 23, 2022

    Accepted: --

    Published Online: Jan. 15, 2024

    The Author Email:

    DOI:10.3969/j.issn.1672-8785.2023.08.004

    Topics