Fig. 1. (a) Cross-sectional HRTEM image of the InGaN/GaN MQWs sample and (b) schematic diagram of the potential distribution in the InGaN/GaN MQWs for describing possible paths of carrier transfer.

Fig. 2. Temperature-dependent PL spectra of InGaN/GaN MQWs measured at (a) 0.5 μW and (b) 50 mW. The dashed lines indicate the separate InGaN matrix- and QD-related lines. Two weak peaks, denoted by 1LO and 2LO, are phonon replicas of the main PM peak.

Fig. 3. Temperature dependencies of (a) the emission integrated intensity (ID, IM, and IT), and the peak energy and full width at half maximum (FWHM) for (b) PM peak and for (c) PD peak measured at 0.5 μW. The dashed lines represent Varshni curves.

Fig. 4. Temperature dependences of (a) IM measured at 3 and 50 mW, and peak energy and FWHM measured at (b) 3 and (c) 50 mW. The dashed lines represent Varshni curves.