Microelectronics, Volume. 52, Issue 4, 582(2022)

A Radiation Hardened Four Channel High Voltage 12-bit DAC

WANG Zhongyan, HU Yongfei, and GAO Weiqi
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  • [in Chinese]
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    References(3)

    [8] [8] HUANG Y C, KER M D. A latchup-immune and robust SCR device for ESD protection in 0.25-μm 5-V CMOS process [J]. IEEE Elec Dev Lett, 2013, 34(5): 674-676.

    [9] [9] CHUNG Y H,WU M H,LI H S. A 12-bit 8.47-fJ/ conversion-step capacitor-swapping SAR ADC in 110 nm CMOS [J]. IEEE Trans Circ & Syst I: Reg Pap, 2015, 62(1): 10-18.

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    WANG Zhongyan, HU Yongfei, GAO Weiqi. A Radiation Hardened Four Channel High Voltage 12-bit DAC[J]. Microelectronics, 2022, 52(4): 582

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    Paper Information

    Special Issue:

    Received: Jan. 26, 2022

    Accepted: --

    Published Online: Jan. 18, 2023

    The Author Email:

    DOI:10.13911/j.cnki.1004-3365.220106

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