Journal of Semiconductors, Volume. 40, Issue 2, 020401(2019)

A novel spin-FET based on 2D antiferromagnet

Jianlu Wang
Author Affiliations
  • National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
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    References(3)

    [1] C Gong, L Li, Z Li et al. Discovery of intrinsic ferromagnetism in two-dimensional vander Waals crystals. Nature, 546, 265(2017).

    [2] S Gong, C Gong, Y Sun et al. Electrically induced 2D half-metallic antiferromagnets and spin field effect transistors. PNAS, 115, 8511(2018).

    [3] S Datta, B Das. Electronic analog of the electro-optic modulator. Appl Phys Lett, 56, 655(1990).

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    Jianlu Wang. A novel spin-FET based on 2D antiferromagnet[J]. Journal of Semiconductors, 2019, 40(2): 020401

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    Paper Information

    Category: News and views

    Received: --

    Accepted: --

    Published Online: Sep. 18, 2021

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    DOI:10.1088/1674-4926/40/2/020401

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