Journal of Inorganic Materials, Volume. 40, Issue 6, 675(2025)

Characterizations by Piezoresponse Force Microscopy on Relaxor Properties of Pb(Mg,Nb)O3-PbTiO3 Ultra-thin Films

Chenyu DONG1, Weijie ZHENG1, Yifan MA2, Chunyan ZHENG1, and Zheng WEN1,2、*
Author Affiliations
  • 11. College of Physics, Qingdao University, Qingdao 266071, China
  • 22. College of Electronics and Information, Qingdao University, Qingdao 266071, China
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    Figures & Tables(10)
    (a) XRD patterns of PMN-PT/SRO/GSO and PZT/SRO/GSO heterostructures, where PMN-PT and PZT are both 100 nm thick, in which the * symbols indicate the (00l) Bragg reflections peaks of GSO, with insets showing the AFM surface morphologies of GSO substrate, SRO/GSO, PMN-PT(5 nm)/SRO/GSO, PMN-PT(100 nm)/SRO/GSO thin-film heterostructures; (b) Cross-sectional STEM image and elemental distributions of the 5 nm thick PMN-PT/SRO/GSO heterostructure; (c) HAADF image of the PMN-PT layer
    Surface morphologies, PFM amplitudes and phase images of 100 nm-thick PZT and PMN-PT thin films
    Polarization-electric field hysteresis loops of PZT (a) and PMN-PT (b) thin-film capacitors with different thicknesses
    S2 PFM hysteresis loops of 100 nm-thick PMN-PT films
    PFM hysteresis loops of STO crystal
    PFM hysteresis characterizations on PZT and PMN-PT thin-film heterostructures with different thicknesses
    (a) PMN-PT/SRO/GSO and (b) PMN-PT/SRO/STO PFM read/write domain characterizations
    PFM hysteresis loops of 5 nm-thick PMN-PT films on various substrates
    PFM hysteresis loops of PMN-PT films with different thicknesses
    PFM hysteresis loops of PMN-PT/SRO/STO heterostructures with different thicknesses
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    Chenyu DONG, Weijie ZHENG, Yifan MA, Chunyan ZHENG, Zheng WEN. Characterizations by Piezoresponse Force Microscopy on Relaxor Properties of Pb(Mg,Nb)O3-PbTiO3 Ultra-thin Films [J]. Journal of Inorganic Materials, 2025, 40(6): 675

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    Paper Information

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    Received: Nov. 9, 2024

    Accepted: --

    Published Online: Sep. 2, 2025

    The Author Email: Zheng WEN (zwen@qdu.edu.cn)

    DOI:10.15541/jim20240471

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