Journal of Semiconductors, Volume. 40, Issue 10, 102801(2019)

Preparation and characterization of AlN seeds for homogeneous growth

Li Zhang, Haitao Qi, Hongjuan Cheng, Lei Jin, and Yuezeng Shi
Author Affiliations
  • China Electronics Technology Group Corp 46th Research Institute, Tianjin 300220, China
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    Figures & Tables(5)
    (Color online) (a) AlN single crystal. (b) AlN samples. (c) Ra of AlN sample at area of 10 × 10 μm2.
    (Color online) Raman spectrum of AlN samples. (a) Wavelength from 100 to 1000 nm. (b) Detailed E2 (high) phone mode peaks.
    (Color online) HRXRD of AlN samples (a) (0002) plane and (b) () plane.
    (Color online) Schematic diagrams of AlN single crystal grown on Si-polar SiC seed. (a) SiC macroscopic steps and deposited AlN 3D islands. (b) AlN 3D islands lateral overgrowth and dislocation formation. (c, d) Cavity movement and dislocation "annihilation".
    SEM images of AlN samples etched in KOH/NaOH melt solution at 320 °C for 3 min. (a) Sample I. (b) Sample II. (c) Sample III.
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    Li Zhang, Haitao Qi, Hongjuan Cheng, Lei Jin, Yuezeng Shi. Preparation and characterization of AlN seeds for homogeneous growth[J]. Journal of Semiconductors, 2019, 40(10): 102801

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    Paper Information

    Category: Articles

    Received: May. 8, 2019

    Accepted: --

    Published Online: Sep. 22, 2021

    The Author Email:

    DOI:10.1088/1674-4926/40/10/102801

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