Journal of Semiconductors, Volume. 40, Issue 10, 102801(2019)
Preparation and characterization of AlN seeds for homogeneous growth
Fig. 1. (Color online) (a) AlN single crystal. (b) AlN samples. (c)
Fig. 2. (Color online) Raman spectrum of AlN samples. (a) Wavelength from 100 to 1000 nm. (b) Detailed
Fig. 3. (Color online) HRXRD of AlN samples (a) (0002) plane and (b) (
Fig. 4. (Color online) Schematic diagrams of AlN single crystal grown on Si-polar SiC seed. (a) SiC macroscopic steps and deposited AlN 3D islands. (b) AlN 3D islands lateral overgrowth and dislocation formation. (c, d) Cavity movement and dislocation "annihilation".
Fig. 5. SEM images of AlN samples etched in KOH/NaOH melt solution at 320 °C for 3 min. (a) Sample I. (b) Sample II. (c) Sample III.
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Li Zhang, Haitao Qi, Hongjuan Cheng, Lei Jin, Yuezeng Shi. Preparation and characterization of AlN seeds for homogeneous growth[J]. Journal of Semiconductors, 2019, 40(10): 102801
Category: Articles
Received: May. 8, 2019
Accepted: --
Published Online: Sep. 22, 2021
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