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Laser & Optoelectronics Progress, Volume. 50, Issue 11, 111404(2013)

808 nm GaAs/AlGaAs Laser Diode Bar with Current Non-Injection Areas Near the Facets

Liu Bin1、* and Liu Yuanyuan2
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  • 2[in Chinese]
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    Liu Bin, Liu Yuanyuan. 808 nm GaAs/AlGaAs Laser Diode Bar with Current Non-Injection Areas Near the Facets[J]. Laser & Optoelectronics Progress, 2013, 50(11): 111404

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    Paper Information

    Category: Lasers and Laser Optics

    Received: May. 8, 2013

    Accepted: --

    Published Online: Oct. 20, 2013

    The Author Email: Liu Bin (rays_liu@126.com)

    DOI:10.3788/lop50.111404

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology