Chinese Journal of Lasers, Volume. 38, Issue 4, 402005(2011)

Watt-Level High-Repetition Rate Ultraviolet Laser with La3Ga5SiO14 Electro-Optic Q-Switch

Lu Tingting*, Li Xiaoli, Zang Huaguo, Zhu Xiaolei, and Lu Yutian
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    References(15)

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    [4] [4] C. X. Wang, G. Y. Wang, A. V. Hicks et al.. High power Q-switched TEM00 mode diode-pumped solid state lasers with >30 W output power at 355 nm[C]. SPIE, 2006, 6100: 610019

    [5] [5] H. Kitano, T. Matsui, K. Sato et al.. Efficient 355 nm generation in CsB3O5 crystal[J]. Opt. Lett., 2003, 28(4): 263~265

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    [10] [10] X. Yin, J. Wang, H. Zhang et al.. Electrooptic properties and electrooptic Q-switch of La3Ga5SiO14 single crystal[J]. Jpn. J. Appl. Phys., 2002, 41(part1): 7419~7421

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    CLP Journals

    [1] Tian Ming, Wang Fei, Li Yuyao, Jiao Zhengchao, Luo Kuan, Che Ying, Wang Xiaohua. Study on a High Power QCW 355 nm Laser Diode Pumped Solid State Laser[J]. Laser & Optoelectronics Progress, 2014, 51(8): 81401

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    Lu Tingting, Li Xiaoli, Zang Huaguo, Zhu Xiaolei, Lu Yutian. Watt-Level High-Repetition Rate Ultraviolet Laser with La3Ga5SiO14 Electro-Optic Q-Switch[J]. Chinese Journal of Lasers, 2011, 38(4): 402005

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    Paper Information

    Category: Laser physics

    Received: Oct. 18, 2010

    Accepted: --

    Published Online: Apr. 2, 2011

    The Author Email: Tingting Lu (tingting_lu@siom.ac.cn)

    DOI:10.3788/cjl201138.0402005

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