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Chinese Journal of Lasers, Volume. 28, Issue 6, 494(2001)

808 nm Wavelength High Power Semiconductor Laser Arrays

[in Chinese]1,2, [in Chinese]2, [in Chinese]2, [in Chinese]2, and [in Chinese]1
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    [1] [1] Rogers L., Macomb S. Indus. Diode laser target manufacturing. Laser Solutions for Manufacturing, 1999, 14(6):25～28

    [2] [2] Mc Euen K., Indus. Diode lasers solve soldering problems. Industrial Laser Rev., 1998, 13(2):16～18

    [3] [3] Peng Y. H., Wang B. Z.et al.. Design of quantum structure stripe lasers for low threshold current. Opt. & Quantum Electron., 1999, 31(1):23～28

    CLP Journals

    [1] Lu Guoguang, Lei Zhifeng, Huang Yun, En Yunfei. Lifetime Test of 808 nm High Power Laser Diodes[J]. Acta Optica Sinica, 2013, 33(s1): 114003

    [2] Zhou Minchao, Jiang Xianfeng, Zhang Lifang, Sun Boshu. Optical Performance of High Power Laser Diode Stack[J]. Chinese Journal of Lasers, 2013, 40(12): 1202004

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. 808 nm Wavelength High Power Semiconductor Laser Arrays[J]. Chinese Journal of Lasers, 2001, 28(6): 494

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    Paper Information

    Category: Laser physics

    Received: Feb. 14, 2000

    Accepted: --

    Published Online: Aug. 10, 2006

    The Author Email:

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    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology