Laser & Optoelectronics Progress, Volume. 61, Issue 11, 1116002(2024)

Optoelectronic Oscillator:From Discrete to integrated photonics on Thin Film Lithium Niobate (Invited)

Zijun Huang, Rui Ma, and Xinlun Cai*
Author Affiliations
  • State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510006, Guangdong, China
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    Figures & Tables(15)
    The current world's lowest phase noise single-loop OEO scheme[37]. (a) Schematic diagram of the OEO; (b) the phase noise of this OEO at oscillation frequency of 10 GHz
    Schematic diagrams of the dual-loop OEOs. (a) Schematic diagram and the phase noise of dual-loop OEO based on vernier effect[38]; (b) schematic diagram and the phase noise of COEO[39]
    OEO with phase locked loop[40]. (a) Schematic diagram of the phase-locked OEO; (b) the phase noise of the phase-locked OEO at oscillation frequency of 10 GHz
    OEO based on MPF. (a) Schematic diagram of the OEO based on PM and MRR and the phase noise of the OEO at oscillation frequency of 25.65 GHz[41]; (b) schematic diagram of the OEO based on PM and phase shifted Bragg grating and the phase noise of the OEO at oscillation frequency of 10 GHz[42]; (c) schematic diagram of the OEO based on PM and SBS effect and the phase noise of the OEO at oscillation frequency of 8.18 GHz, 13.25 GHz and 32.02 GHz[43]
    PT symmetric OEO schemes. (a) Schematic diagram of the dual-fiber loop PT symmetric OEO and the phase noise[19]; (b) schematic diagram of the PT symmetric OEO based on Sagnac loop and the phase noise[45]; (c) schematic diagram of the single-fiber loop PT symmetric OEO and the simulated phase noise[46]
    FDML OEO scheme[20]. (a) Schematic diagram of the FDML OEO; (b) the frequency spectra of the output signal of the FDML OEO with different frequency sweeping range; (c) the phase noise of the FDML OEO
    Broadband random OEO[47]. (a) Schematic diagram of the broadband random OEO; (b) the phase noise of the broadband random OEO with RF filter centered at 5 GHz with a 3 dB bandwidth of 60 MHz
    Compact OEO based on WGMR[49]. (a) Image of the OEO based on WGMR; (b) the phase noise of the OEO at oscillation frequency of 34.7 GHz
    Silicon photonic integrated OEO schemes. (a) Schematic diagram of the silicon photonic OEO based on phase modulator and micro-disk resonator and the phase noise of the OEO at oscillation frequency of 4.74 GHz [23]; (b) schematic diagram of the silicon photonic integrated PT symmetric OEO and the phase noise of the OEO at oscillation frequency of 4.97 GHz and 13.67 GHz[50]; (c) schematic diagram of the silicon photonic integrated OEO based on RF filter and the phase noise of the OEO at oscillation frequency of 10 GHz[51]
    Indium phosphide photonic integrated PT symmetric OEO[24]. (a) Image of the InP photonic chip of the integrated OEO; (b) the phase noise of the OEO at oscillation frequency of 8.87 GHz
    Integrated parity-time symmetric OEO based on InP integrated mode-locked laser[52]. (a) Schematic diagram of the PT symmetric OEO based on integrated mode-locked laser; (b) the phase noise of the OEO at oscillation frequency of 24.02 GHz, 24.50 GHz, and 24.96 GHz
    Chalcogenide photonic integrated OEO[25]. (a) Conceptual diagram of the fully photonic integrated OEO based on SBS; (b) the phase noise of the OEO at oscillation frequency of 10.9 GHz and 40 GHz
    The fixed frequency TFLN OEO scheme[53]. (a) Schematic diagram of the fixed frequency TFLN OEO; (b) the phase noise of the fixed frequency TFLN OEO scheme and commercial Keysight microwave source
    The frequency tunable TFLN OEO scheme[53]. (a) Schematic diagram of the frequency tunable TFLN OEO; (b) operation principle of the frequency tunable TFLN OEO; (c) the RF spectrum of the frequency tunable OEO from 20 GHz to 35 GHz; (d) the phase noise of the frequency tunable OEO scheme and commercial Keysight microwave source
    • Table 1. Comparison of the characteristics of integrated OEOs

      View table

      Table 1. Comparison of the characteristics of integrated OEOs

      Architecture(total loop length)Integrated componentsMode selectionRF frequency /GHzPhase noise @10 kHz/(dBc·Hz-1Quality factor of the delay line or the resonator
      Single-loop37(16 km)NoEBF10-157QDL = 5×106
      Dual-loop38(2 km)NoVernier Effect + EBF10-140QDL = 6.3×105
      Coupled-loop39(800 m)NoVernier Effect + EBF10-110QDL = 2.5×105
      MPF-based43(1 km)NoSBS-MPF + IIR-MPF0‒40-113QDL = 3.1×105@10 GHz
      PT-symmetric19(3.2 km)NoPT Symmetry4-139QDL = 4×105
      FDML-based20(9 km)NoMPF4‒18-135QDL = 2.8×106@10 GHz
      Broadband random46NoEBF0‒40
      WGMR-based49CompactHigh-Q WGMR30-110QR=2×107
      Chalcogenide-based25(25 m)WaveguidesSBS-MPF5‒40-78QDL = 7.8×103@10 GHz
      Silicon-based23PM,MDR,PDMDR-MPF3‒8-80QR=1.1×105

      SOI-based PT symmetric50

      (50 m)

      MZI,MRR,PDMRR-MPF + PT Symmetry0‒20-83QR=1×106
      SOI-based51(500 m)Hybrid integratedEBF3‒18-116

      QDL=1.6×105

      @10 GHz

      InP-based24DML,ODL,PDEBF8.86‒8.88-60
      InP-based PT symmetric52(5 km)SOA,DBRPT Symmetry24‒25-108

      QDL=3.9×106

      @25 GHz

      TFLN53(25 m)MZM,MRRMRR-MPF30-102QR=2.8×105
      TFLN53(25 m)PM,MRRMRR-MPF20‒35-87QR=1.3×106
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    Zijun Huang, Rui Ma, Xinlun Cai. Optoelectronic Oscillator:From Discrete to integrated photonics on Thin Film Lithium Niobate (Invited)[J]. Laser & Optoelectronics Progress, 2024, 61(11): 1116002

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    Paper Information

    Category: Materials

    Received: Apr. 8, 2024

    Accepted: Apr. 30, 2024

    Published Online: Jun. 12, 2024

    The Author Email: Xinlun Cai (caixlun5@mail.sysu.edu.cn)

    DOI:10.3788/LOP241061

    CSTR:32186.14.LOP241061

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