Acta Optica Sinica, Volume. 43, Issue 15, 1500001(2023)

Infrared Optoelectrical Detection Technology Based on Mercury Chalcogenide Colloidal Quantum Dots

Qun Hao1,2,3、*, Xin Tang1,2,3, and Menglu Chen1,2,3
Author Affiliations
  • 1School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China
  • 2Beijing Key Laboratory for Precision Optoelectronic Measurement Instrument and Technology,Beijing 100081, China
  • 3Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314019, Zhejiang, China
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    Figures & Tables(11)
    Colloidal quantum dot technology[4]
    Interband transition infrared detectors based on mercury chalcogenide CQDs by the University of Chicago. (a) Schematic of the device structure[16]; (b) schematic of the detector structure[21]; (c) cross-sectional scanning electron microscope of the fabricated detector[21]; (d) illustration of the structure of a dual-band CQD imaging device, bias voltage is applied between the indium tin oxide (ITO) and the Au contact (grounded)[22]; (e) spectral response of the dual-band detector under a bias voltage from positive (+500 mV) to negative (-300 mV) voltage at 85 K[22]
    Interband transition infrared detectors based on mercury chalcogenide CQDs by Beijing Institute of Technology. (a) Schematic of spray-stencil lithography platform[23]; (b) photograph of CQD films on a 4 inch substrate and a glass hemisphere[23]; (c) detectivity as a function of wavenumber of detectors fabricated by spray-stencil lithography and drop-coated[23]; (d) structure diagram of the dual-band device[24]; (e) energy band structure diagram of the dual-band device[24]; (f) response spectra of the dual-band device under positive and negative bias[24]
    Interband transition infrared detectors based on mercury chalcogenide CQDs by Beijing Institute of Technology. (a) Illustration of dual-mode colloidal quantum-dot photodetector (inset: equivalent circuit of dual band infrared photodiode)[25]; bias-dependent spectral response under (b) positive and (c) negative bias voltages[25]; (d) cross-sectional scanning electron microscopy image of the dual-band photodetector (scale bar: 1 μm)[26]; (e) spectral response of the dual-band detector under a positive (+800 mV) and negative (-200 mV) bias voltage at 80 K[26]; (f) spectral responsivity of the short-wave infrared /mid-wave infrared mode with and without the cavity at 80 K[26]; (g) schematic diagram of the spectrometer with a homojunction device[27]; (h) transmission measured by homojunction device and Fourier transform spectrometers[27]; (i) absorption with different hexane concentrations in the air[27]
    Intraband transition infrared detectors based on mercury chalcogenide CQDs by representative groups. (a) Doping requirement for intraband conduction[28]; (b) plot of the ratio of the intraband signal divided by the fitted magnitude of 1 s interband signal for two sizes of nanocrystals [31]; (c) Fermi energy with respect to the valence band as a function of the interband gap[32]; (d) scheme of HgSe QDs capped with POM-SH ligands[33]; (e) current as a function of decreasing temperature, VDS = 1 V[33]; (f) scheme of polarized band structure of a random colloidal quantum dot infrared photodetector consisting of HgSe nanocrystals as absorber material and HgTe nanocrystals as barrier material[34]; (g) transient reflectivity signal as a function of time for the film made of HgSe (bottom), HgTe (middle), and HgSe/HgTe mixture (top)[35]
    Intraband transition infrared detectors based on mercury chalcogenide CQDs by Beijing Institute of Technology. (a) Field effect transistor source-drain current for HgSe/Hybrid at 80 K[36]; (b) field effect transistor mobility of HgSe/hybrid (black) and HgSe/EDT (red) as a function of temperature as well as Marcus theory fitting[36]; (c) Hall voltage measured at 200 K of (7.5±0.5) nm diameter HgSe/Hybrid QD film with thickness (35±5) nm[36]; (d) 1Se-1Pe exciton spectra of films of HgSe/EDT with different size distributions[37]; (e)(f) size distribution effect on 0.25 eV interband and intraband gaps at 80 K[37]; (g) schematic diagram of the mixed-phase ligand exchange process[38]; (h) infrared hot images by a HgSe intraband CQD photodetector[38]; (i) schematic of plasmonic disk arrays on SiO2 /Si[39]; (j) spectral responsivity of 4.2 μm samples, 6.4 μm samples, 7.2 μm samples, and 9.0 μm samples[39]
    HgTe CQDs-based infrared-to-visible upconverters by Beijing Institute of Technology[49]. (a) Operational mechanism of infrared-to-visible upconverters; (b) architecture schematic of infrared-to-visible upconverter; (c) images of an upconversion device without and with infrared light; (d) comparison between unmatched photodetector with light-emitting diode-coupled and optimally matched photodetector with light-emitting diode -coupled upconverters; (e) relative luminance variation with the dark condition of upconverters varying with infrared power densities at the applied voltage of 16 V; (f) infrared-to-visible upconversion efficiency of upconversion devices varying with infrared power densities
    Study on infrared focal plane array based on mercury chalcogenide CQDs. (a) Diagram of photoconduction in a CQD detector[50]; (b) map of the dark current for the 320×256 mid-wave infrared CQDs focal plane array[50]; (c) mid-wave infrared image of a person in a doorway[50]; (d) scheme of the device that is plugged in the camera based on a film of HgTe CQDs, picture of the short-wave infrared camera with a Computar M1614-SW objective[52]; (e) visible picture (smartphone camera) of a scene with four vials containing tetrachloroethylene (TCE), toluene, acetone, and water (H2O), and an ITO covered glass slide and a 2 inch silicon wafer are placed[52]; (f) same scene as in Fig. (e) taken with the HgTe QD based focal plane array[52]
    Study on infrared focal plane array based on mercury chalcogenide CQDs[53]. (a) Illustration of the working process of trapping-mode photodetectors; (b) energy band diagrams of the trapping-mode photodetectors; (c) 8 inch silicon readout integrated circuit wafer and zoomed view of the pixel region; (d) captured short-wave and mid-wave infrared images with CQD imagers
    Study on infrared focal plane array based on mercury chalcogenide CQDs[54]. (a) Multispectral CQD imagers and periphery circuits; (b) imaging scene: a soldering iron, a silicon wafer, and an ultraviolet lamp; (c) captured ultraviolet, visible, and short-wave infrared images; (d) merged multispectral images with an ultraviolet image as the blue channel, visible light as the grayscale channel, and a short-wave infrared image as the red channel
    • Table 1. Device performance comparison of photodetectors with different configurations

      View table

      Table 1. Device performance comparison of photodetectors with different configurations

      InstituteDevice configuration

      Cut-off wavelength

      λCut-off /μm

      Pixel arraySensing material

      Detectivity

      Jones

      EQE /%

      Responsivity

      A /W

      Operating

      temperature

      /K

      UChicago7Interband1.7-5N/AHgTe CQDsS:109N/AS:0.25130
      UChicago16Interband5.25N/AHgTe CQDsS:4.2×10102.5S:0.0890
      Sorbonne52Interband2.0640×512HgTe CQDsN/A4-5N/A300
      BIT53Interband2.5320×256HgTe CQDs

      F:2×1011

      S:6×1011

      175

      F:2.3

      S:28

      300
      BIT54Interband2.5320×256HgTe CQDsN/AN/AF:0.25300
      UChicago28Intraband5N/AHgSe CQDsS:8.5×108N/AS:0.01280
      Sorbonne35Intraband5N/AHgTe and HgSe CQDsS:109N/AS:0.00380
      BIT38Intraband5N/AHgSe CQDsS:1.7×109N/AS:0.07780
      BIT35Upconverter2.5N/AHgTe CQDsS:4.86×101092.711.85300
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    Qun Hao, Xin Tang, Menglu Chen. Infrared Optoelectrical Detection Technology Based on Mercury Chalcogenide Colloidal Quantum Dots[J]. Acta Optica Sinica, 2023, 43(15): 1500001

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    Paper Information

    Category: Reviews

    Received: May. 10, 2023

    Accepted: Jul. 11, 2023

    Published Online: Aug. 15, 2023

    The Author Email: Hao Qun (qhao@bit.edu.cn)

    DOI:10.3788/AOS230963

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