According to the packaging structure of uncooled 980 nm semiconductor laser module, the chip epitaxial layer, heat sink and solder layer in the epitaxy (epi)-down bonded lasers module were designed, and the heat distribution of mini-dual in line (DIL) uncooled 980 nm semiconductor laser under the continuous-wave (CW) drive conditions was simulated using the finite element method (FEM). The thermal properties of epi-down and epi-up bonded lasers were compared, and the photoelectric properties of actual laser module were tested. Epi-down bonded uncooled 980 nm semiconductor laser can work steadily over a wide temperature range of 0～70 ℃, with a small wavelength shift of 0.2 nm, full-width at half-maximum (FWHM) less than 1.6 nm, side-mode suppression ratio (SMSR) of more than 45 dB, and a high optical power of 200 mW. The results show that the optical and thermal characteristics of epi-down bonded uncooled 980 nm semiconductor laser have been greatly improved, and it can meet the need of high-performance miniature erbium-doped fiber amplifier.