Chinese Journal of Lasers, Volume. 39, Issue 8, 802001(2012)
Study of 940 nm Semiconductor Lasers with Non-Absorb Window Structure Fabricated by Impurity-Free Vacancy Disordering
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Zhou Lu, Bo Baoxue, Wang Yunhua, Jia Baoshan, Bai Duanyuan, Qiao Zhongliang, Gao Xin. Study of 940 nm Semiconductor Lasers with Non-Absorb Window Structure Fabricated by Impurity-Free Vacancy Disordering[J]. Chinese Journal of Lasers, 2012, 39(8): 802001
Paper Information
Category: Laser physics
Received: Mar. 20, 2012
Accepted: --
Published Online: Jun. 7, 2012
The Author Email: Lu Zhou (zhoulu885@163.com)
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