To improve catastrophic optical damage threshold power of 940 nm semiconductor laser, the 940 nm GaInP/GaAsP/GaInAs semiconductor laser with non-absorbing window is fabricated. The impacts of rapid thermal annealing (RTA) temperature and thickness of SiO2 on intermixing are evaluated by photoluminescence spectra. The distribution of doped concentration tested by electrochemical capacitance-voltage (EC-V) method is also studied. Experimental results show that, the samples coated by sputtering method with 200-nm SiO2 shows 29.8-nm blueshift at 875 ℃ after RTA. But the blue shift of samples coated with 200-nm TiO2 by electron beam evaporation method is only 4.3 nm, which ensures a large band gap shift in the window region and maintains original band gap in gain region simultaneously. The optimized condition is used on semiconductor lasers with non-absorption window (NAW). It is found that the COD threshold is improved 1.6 times, and the output power has been greatly improved.