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Photonics Research, Volume. 12, Issue 12, 2804(2024)

Gate-tunable positive and negative photoresponses based on a mixed-dimensional Ga2O3/WSe2 junction field-effect transistor for logic operation

Zibin Huang1、†, Wenhai Wang2、†, Sujuan Wang1, Yang Chen1, Hanzhe Zhang1, Lisheng Wang3, Huiru Sun1, Yuan Pan1, Hongyu Chen1, Xun Yang4,6、*, Francis Chi-Chung Ling5, and Shichen Su1,7、*
Author Affiliations
  • 1Institute of Semiconductor Science and Technology, South China Normal University, Foshan 528225, China
  • 2College of Electrical Engineering, Hebei University of Architecture, Zhangjiakou 075000, China
  • 3State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
  • 4Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Materials Physics, Ministry of Education, School of Physics and Laboratory of Zhongyuan Light, Zhengzhou University, Zhengzhou 450052, China
  • 5Department of Physics, The University of Hong Kong, Hong Kong 999077, China
  • 6e-mail: yangxun9103@zzu.edu.cn
  • 7e-mail: shichensu@scnu.edu.cn
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    Zibin Huang, Wenhai Wang, Sujuan Wang, Yang Chen, Hanzhe Zhang, Lisheng Wang, Huiru Sun, Yuan Pan, Hongyu Chen, Xun Yang, Francis Chi-Chung Ling, Shichen Su, "Gate-tunable positive and negative photoresponses based on a mixed-dimensional Ga2O3/WSe2 junction field-effect transistor for logic operation," Photonics Res. 12, 2804 (2024)

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    Paper Information

    Category: Optoelectronics

    Received: Jun. 28, 2024

    Accepted: Sep. 2, 2024

    Published Online: Nov. 27, 2024

    The Author Email: Xun Yang (yangxun9103@zzu.edu.cn), Shichen Su (shichensu@scnu.edu.cn)

    DOI:10.1364/PRJ.534338

    CSTR:32188.14.PRJ.534338

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology