[1] [1] J. P. Long,S. Varadaraajan,J. Matthews et al.. UV detectors and focal plane array imagers based on AlGaN p-i-n photodiodes[J]. Opto-Electronics Review,2002,10(4):251-260

[2] [2] R. McClintock,K. Mayes,A. Yasan et al.. 320×256 solar-blind focal plane arrays based on AlxGa1-xN[J]. Appl. Phys. Lett.,2005,86(1):011117

[3] [3] Yuan YongGang,Zhang Yan,Chu KaiHui et al.. Development of solar-blind AlGaN 128×128 Ultraviolet Focal Plane Arrays[J]. Science in China,2008,51(6):820-826

[4] [4] M. B. Reine,A. Hairston,P. Lamarre et al.. Solar-blind AlGaN 256*256 p-i-n detectors and focal plane arrays[J]. SPIE,2006,6121:236-250

[5] [5] J.F. Yan,L. W. Guo,J. Zhang et al.. Characteristics of the improved a-plane GaN films grown on r-plane sapphire with two-step AlN buffer layer[J]. J. Cryst. Growth.,2007,307(1):35-39

[6] [6] Xu Jintong,Research and fabrication of GaN-based avalanche photodiodes[D]. Shanghai:Shanghai Institute of Technical Physics,Chinese Academy of Sciences,2006

[7] [7] Jingxi Sun,K. A. Richert,J. M. Redwing et al.. p-GaN surface treatments for metal contacts[J]. Appl. Phys. Lett.,2000,76(4):415-417

[8] [8] Yingwen Tang,Da You,Jintong Xu et al.. Reduction of ohmic contact resistivity on p-GaN using N2 plasma surface treatment at room temperature[J]. Semicond. Sci. Technol.,2006,21:1597-1599

[9] [9] Wang Lin,Xu Jintong,Chen Jun et al.. The Omic Contacts of high Al contents on N-AlxGa1-xN materials[J]. Laser&Infrared,2007,37(21):967-970

[10] [10] Chen Jie,Xu Jintong,Wang Ling et al.. Low-damage wet chemical etching for GaN-based visible-blind p-i-n detector[J]. SPIE,2008,6621:66211D