[1] [1] M. C. Bost, J. E. Mahan. Optical properties of semiconducting iron disilicide thin films [J]. J. Appl. Phys., 1985, 58(7):2696～2703

[2] [2] Ch. Stuhlmann, J. Schmidt, H. Ibach. Semiconducting iron disilicide films on Si(lll): A high resolution electronenergy loss spectroscopy study [J]. J. Appl. Phys., 1992, 72(12):5905～5912

[3] [3] Charalabos A. Dimitriadis, Jurgen H. Werner. Growth mechanism and morphology of semiconducting FeSi2 films [J]. J. Appl. Phys., 1990, 68(1):93～96

[4] [4] Lucio Martinelli, E. Grilli, M. Guzzi et al.. Room-temperature electroluminescence of ion-beam-synthesized β-FeSi2 precipitates in silicon [J]. Appl. Phys. Lett., 2003, 83(4):794～796

[5] [5] S. Komuro, T. Katsumata, T. Morikawa et al.. Formation of β-FeSi2 thin films using laser ablation [J]. J. Crystal Growth, 2002, 237-239:1961～1965

[6] [6] T. Yoshitake, K. Nagayama, M. Yatabe et al.. Semiconducting nanocrystalline iron disilicide thin films prepared by pulsed-laser ablation [J]. Appl. Phys. Lett., 2003, 83(15):3057～3059

[7] [7] Tsuyoshi Yoshitake, Tatsuya Nagamoto, Kunihito Nagayama. Microstructure of β-FeSi2 thin films prepared by pulsed laser deposition [J]. Thin Solid Films, 2001, 381:236～243

[9] [9] E. Millon, O. Albert, J. C. Loulergue et al.. Growth of heteroepitaxial ZnO thin films by femtosecond pulsed-laser deposition [J]. J. Appl. Phys., 2000, 88(11):6937～ 6939

[10] [10] P. P. Pronko, P. A. VanRompay, Z. Zhang et al.. Isotope enrichment in laser ablation plumes and commensurately deposited thin films [J]. Phys. Rev. Lett., 1999, 83(13):2596～2599

[11] [11] Z. Zhang, P. A. VanRompay, J. A. Nees et al.. Nitride film deposition by femtosecond and nanosecond laser ablation in low-pressure nitrogen discharge gas [J]. Appl. Surf. Sci., 2000, 154-155:165～171

[12] [12] Peixiang Lu, Youhua Zhou, Qiguang Zheng et al.. Single-phase β-FeSi2 thin films prepared on Si wafer by femtosecond laser ablation and its photoluminescence at room temperature [J]. Phys. Lett. A, 2006, 350(3-4):293～296