Chinese Journal of Lasers, Volume. 49, Issue 18, 1816002(2022)

[in Chinese]

Sensen Li1,2、*, Yu Zhang3,4,5, Guangli Xu6, Yingqiang Xu3,4,5, Zhichuan Niu3,4,5, and Xiusheng Yan1,2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
  • 4[in Chinese]
  • 5[in Chinese]
  • 6[in Chinese]
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    Figures & Tables(4)
    Optical path structure and photo of GaSb-based semiconductor laser. (a) Optical structure; (b) photo
    Output parameters of GaSb-based semiconductor laser. (a) P-I-V (power-current-voltage) curve; (b) laser spectrum
    Output laser spots of GaSb-based semiconductor laser. (a) Near field spot; (b) far field spot
    Stability of GaSb-based semiconductor laser power in 24 h
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    Sensen Li, Yu Zhang, Guangli Xu, Yingqiang Xu, Zhichuan Niu, Xiusheng Yan. [J]. Chinese Journal of Lasers, 2022, 49(18): 1816002

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    Paper Information

    Category: rapid communications

    Received: Jul. 16, 2022

    Accepted: Jul. 21, 2022

    Published Online: Aug. 22, 2022

    The Author Email: Li Sensen (sensli@163.com)

    DOI:

    CSTR:32186.14.

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