Chinese Journal of Lasers, Volume. 49, Issue 18, 1816002(2022)
[in Chinese]
Fig. 1. Optical path structure and photo of GaSb-based semiconductor laser. (a) Optical structure; (b) photo
Fig. 2. Output parameters of GaSb-based semiconductor laser. (a) P-I-V (power-current-voltage) curve; (b) laser spectrum
Fig. 3. Output laser spots of GaSb-based semiconductor laser. (a) Near field spot; (b) far field spot
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Sensen Li, Yu Zhang, Guangli Xu, Yingqiang Xu, Zhichuan Niu, Xiusheng Yan. [J]. Chinese Journal of Lasers, 2022, 49(18): 1816002
Category: rapid communications
Received: Jul. 16, 2022
Accepted: Jul. 21, 2022
Published Online: Aug. 22, 2022
The Author Email: Li Sensen (sensli@163.com)
CSTR:32186.14.