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Photonics Research, Volume. 6, Issue 5, 457(2018)

Tapering-induced enhancement of light extraction efficiency of nanowire deep ultraviolet LED by theoretical simulations

Ronghui Lin1, Sergio Valdes Galan1, Haiding Sun1, Yangrui Hu1, Mohd Sharizal Alias2, Bilal Janjua2, Tien Khee Ng2, Boon S. Ooi2, and Xiaohang Li1、*
Author Affiliations
  • 1Advanced Semiconductor Laboratory, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
  • 2Photonics Laboratory, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
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    [1] M. A. Wurtele, T. Kolbe, M. Lipsz, A. Kulberg, M. Weyers, M. Kneissl, M. Jekel. Application of GaN-based ultraviolet-C light emitting diodes—UV LEDs—for water disinfection. Water Res., 45, 1481-1489(2011).

    [2] A. J. Hopkins, J. L. Cooper, L. T. M. Profeta, A. R. Ford. Portable deep-ultraviolet (DUV) Raman for standoff detection. Appl. Spectrosc., 70, 861-873(2016).

    [3] S. J. Choi, J. H. Kim, H. H. Lee. Deep-UV curing of poly(4-vinyl phenol) gate dielectric for hysteresis-free organic thin-film transistors. IEEE Electron Device Lett., 30, 454-456(2009).

    [4] J. Rass, T. Kolbe, N. L. Ploch, T. Wernicke, F. Mehnke, C. Kuhn, J. Enslin, M. Guttmann, C. Reich, A. Mogilatenko, J. Glaab, C. Stoelmacker, M. Lapeyrade, S. Einfeldt, M. Weyers, M. Kneissl. High power UV-B LEDs with long lifetime. Proc. SPIE, 9363, 93631K(2015).

    [5] H. Y. Ryu, I. G. Choi, H. S. Choi, J. I. Shim. Investigation of light extraction efficiency in AlGaN deep-ultraviolet light-emitting diodes. Appl. Phys. Express, 6, 062101(2013).

    [6] H. Hirayama, T. Takano, J. Sakai, T. Mino, K. Tsubaki, N. Maeda, M. Jo, Y. Kanazawa, I. Ohshima, T. Matsumoto, N. Kamata. Realization of over 10% EQE AlGaN deep-UV LED by using transparent p-AlGaN contact layer. 2016 International Semiconductor Laser Conference, 1-2(2016).

    [7] R. G. Banal, M. Funato, Y. Kawakami. Optical anisotropy in [0001]-oriented AlxGa1-xN/AlN quantum wells (x > 0.69). Phys. Rev. B, 79, 121308(2009).

    [8] X. J. Chen, C. Ji, Y. Xiang, X. N. Kang, B. Shen, T. J. Yu. Angular distribution of polarized light and its effect on light extraction efficiency in AlGaN deep-ultraviolet light-emitting diodes. Opt. Express, 24, A935-A942(2016).

    [9] J. Zhang, H. P. Zhao, N. Tansu. Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers. Appl. Phys. Lett., 97, 111105(2010).

    [10] M. Djavid, Z. T. Mi. Enhancing the light extraction efficiency of AlGaN deep ultraviolet light emitting diodes by using nanowire structures. Appl. Phys. Lett., 108, 051102(2016).

    [11] S. Zhao, S. M. Sadaf, S. Vanka, Y. Wang, R. Rashid, Z. Mi. Sub-milliwatt AlGaN nanowire tunnel junction deep ultraviolet light emitting diodes on silicon operating at 242  nm. Appl. Phys. Lett., 109, 201106(2016).

    [12] T. F. Kent, S. D. Carnevale, A. T. M. Sarwar, P. J. Phillips, R. F. Klie, R. C. Myers. Deep ultraviolet emitting polarization induced nanowire light emitting diodes with AlxGa1-xN active regions. Nanotechnology, 25, 455201(2014).

    [13] S. M. Sadaf, S. Zhao, Y. Wu, Y. H. Ra, X. Liu, S. Vanka, Z. Mi. An AlGaN core-shell tunnel junction nanowire light-emitting diode operating in the ultraviolet-C band. Nano Lett., 17, 1212-1218(2017).

    [14] M. Djavid, D. D. Choudhary, M. Rajan Philip, T. H. Q. Bui, O. Akinnuoye, T. T. Pham, H. P. T. Nguyen. Effects of optical absorption in deep ultraviolet nanowire light-emitting diodes. Photon. Nanostr. Fundam. Appl., 28, 106-110(2018).

    [15] J. J. Wierer, A. David, M. M. Megens. III-nitride photonic-crystal light-emitting diodes with high extraction efficiency. Nat. Photonics, 3, 163-169(2009).

    [16] A. A. Erchak, D. J. Ripin, S. Fan, P. Rakich, J. D. Joannopoulos, E. P. Ippen, G. S. Petrich, L. A. Kolodziejski. Enhanced coupling to vertical radiation using a two-dimensional photonic crystal in a semiconductor light-emitting diode. Appl. Phys. Lett., 78, 563-565(2001).

    [17] C. Wiesmann, K. Bergenek, N. Linder, U. T. Schwarz. Photonic crystal LEDs—designing light extraction. Laser Photon. Rev., 3, 262-286(2009).

    [18] E. M. Purcell. Spontaneous emission probabilities at radio frequencies. Phys. Rev., 69, 681(1946).

    [19] M. Fujita, S. Takahashi, Y. Tanaka, T. Asano, S. Noda. Simultaneous inhibition and redistribution of spontaneous light emission in photonic crystals. Science, 308, 1296-1298(2005).

    [20] H. D. Sun, A. Piquette, M. Raukas, T. D. Moustakas. Enhancement of yellow light extraction efficiency of Y3Al5O12:Ce3+ ceramic converters using a 2-D TiO2 hexagonal-lattice nanocylinder photonic crystal layer. IEEE Photon. J., 8, 4500310(2016).

    [21] A. David, T. Fujii, R. Sharma, K. McGroddy, S. Nakamura, S. P. DenBaars, E. L. Hu, C. Weisbuch, H. Benisty. Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution. Appl. Phys. Lett., 88, 061124(2006).

    [22] B. Janjua, H. Sun, C. Zhao, D. H. Anjum, F. Wu, A. A. Alhamoud, X. Li, A. M. Albadri, A. Y. Alyamani, M. M. El-Desouki, T. K. Ng, B. S. Ooi. Self-planarized quantum-disks-in-nanowires ultraviolet-B emitters utilizing pendeo-epitaxy. Nanoscale, 9, 7805-7813(2017).

    [23] S. Zhao, S. Y. Woo, S. M. Sadaf, Y. Wu, A. Pofelski, D. A. Laleyan, R. T. Rashid, Y. Wang, G. A. Botton, Z. Mi. Molecular beam epitaxy growth of Al-rich AlGaN nanowires for deep ultraviolet optoelectronics. APL Mater., 4, 086115(2016).

    [24] K. H. Li, X. Liu, Q. Wang, S. Zhao, Z. Mi. Ultralow-threshold electrically injected AlGaN nanowire ultraviolet lasers on Si operating at low temperature. Nat. Nanotechnol., 10, 140-144(2015).

    [25] Q. Y. Yue, K. Li, F. M. Kong, J. Zhao, W. Li. Analysis on the light extraction efficiency of GaN-based nanowires light-emitting diodes. IEEE J. Quantum Electron., 49, 697-704(2013).

    [26] B. Janjua, H. D. Sun, C. Zhao, D. H. Anjum, D. Priante, A. A. Alhamoud, F. Wu, X. H. Li, A. M. Albadri, A. Y. Alyamani, M. M. El-Desouki, T. K. Ng, B. S. Ooi. Droop-free AlxGa1−xN/AlyGa1−yN quantum-disks-in-nanowires ultraviolet LED emitting at 337  nm on metal/silicon substrates. Opt. Express, 25, 1381-1390(2017).

    [27] D. E. Aspnes, A. A. Studna. Dielectric functions and optical-parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0  eV. Phys. Rev. B, 27, 985-1009(1983).

    [28] S. Adachi. Optical Constants of Crystalline and Amorphous Semiconductors: Numerical Data and Graphical Information(1999).

    [29] S. Zhao, X. Liu, S. Y. Woo, J. Kang, G. A. Botton, Z. Mi. An electrically injected AlGaN nanowire laser operating in the ultraviolet-C band. Appl. Phys. Lett., 107, 043101(2015).

    [30] S. D. Carnevale, J. Yang, P. J. Phillips, M. J. Mills, R. C. Myers. Three-dimensional GaN/AIN nanowire heterostructures by separating nucleation and growth processes. Nano Lett., 11, 866-871(2011).

    [31] S. Fernandez-Garrido, X. Kong, T. Gotschke, R. Calarco, L. Geelhaar, A. Trampert, O. Brandt. Spontaneous nucleation and growth of GaN nanowires: the fundamental role of crystal polarity. Nano Lett., 12, 6119-6125(2012).

    [32] A. Pierret, C. Bougerol, S. Murcia-Mascaros, A. Cros, H. Renevier, B. Gayral, B. Daudin. Growth, structural and optical properties of AlGaN nanowires in the whole composition range. Nanotechnology, 24, 115704(2013).

    [33] S. G. Johnson, J. D. Joannopoulos. Block-iterative frequency-domain methods for Maxwell’s equations in a planewave basis. Opt. Express, 8, 173-190(2001).

    [34] T. Kolbe, A. Knauer, C. Chua, Z. H. Yang, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, M. Kneissl. Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes. Appl. Phys. Lett., 97, 171105(2010).

    [35] S. G. Johnson, S. H. Fan, P. R. Villeneuve, J. D. Joannopoulos, L. A. Kolodziejski. Guided modes in photonic crystal slabs. Phys. Rev. B, 60, 5751-5758(1999).

    [36] D. R. Solli, J. M. Hickmann. Study of the properties of 2D photonic crystal structures as a function of the air-filling fraction and refractive index contrast. Opt. Mater., 33, 523-526(2011).

    [37] P. F. Zhu, N. Tansu. Effect of packing density and packing geometry on light extraction of III-nitride light-emitting diodes with microsphere arrays. Photon. Res., 3, 184-191(2015).

    [38] Y. Tanaka, T. Asano, Y. Akahane, B. S. Song, S. Noda. Theoretical investigation of a two-dimensional photonic crystal slab with truncated cone air holes. Appl. Phys. Lett., 82, 1661-1663(2003).

    [39] J. W. Kim, J. H. Jang, M. C. Oh, J. W. Shin, D. H. Cho, J. H. Moon, J. I. Lee. FDTD analysis of the light extraction efficiency of OLEDs with a random scattering layer. Opt. Express, 22, 498-507(2014).

    CLP Journals

    [1] Liang Zhang, Yanan Guo, Jianchang Yan, Qingqing Wu, Yi Lu, Zhuohui Wu, Wen Gu, Xuecheng Wei, Junxi Wang, Jinmin Li, "Deep ultraviolet light-emitting diodes based on well-ordered AlGaN nanorod array," Photonics Res. 7, B66 (2019)

    [2] Giorgos Boras, Xuezhe Yu, Huiyun Liu. III–V ternary nanowires on Si substrates: growth, characterization and device applications[J]. Journal of Semiconductors, 2019, 40(10): 101301

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    Ronghui Lin, Sergio Valdes Galan, Haiding Sun, Yangrui Hu, Mohd Sharizal Alias, Bilal Janjua, Tien Khee Ng, Boon S. Ooi, Xiaohang Li, "Tapering-induced enhancement of light extraction efficiency of nanowire deep ultraviolet LED by theoretical simulations," Photonics Res. 6, 457 (2018)

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    Paper Information

    Category: Optical Devices

    Received: Dec. 18, 2017

    Accepted: Mar. 8, 2018

    Published Online: Jul. 6, 2018

    The Author Email: Xiaohang Li (xiaohang.li@kaust.edu.sa)

    DOI:10.1364/PRJ.6.000457

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology