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Journal of Semiconductors, Volume. 42, Issue 1, 014103(2021)

Neutron irradiation-induced effects on the reliability performance of electrochemical metallization memory devices

Ye Tao1,3, Xuhong Li1, Zhongqiang Wang1, Gang Li2, Haiyang Xu1, Xiaoning Zhao1, Ya Lin1, and Yichun Liu1
Author Affiliations
  • 1Key Laboratory for UV Light-Emitting Materials and Technology (Northeast Normal University), Ministry of Education, Changchun 130024, China
  • 2Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, China
  • 3School of Science, Changchun University of Science and Technology, Changchun 130022, China
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    Ye Tao, Xuhong Li, Zhongqiang Wang, Gang Li, Haiyang Xu, Xiaoning Zhao, Ya Lin, Yichun Liu. Neutron irradiation-induced effects on the reliability performance of electrochemical metallization memory devices[J]. Journal of Semiconductors, 2021, 42(1): 014103

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    Paper Information

    Category: Articles

    Received: Oct. 14, 2020

    Accepted: --

    Published Online: Mar. 19, 2021

    The Author Email:

    DOI:10.1088/1674-4926/42/1/014103

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology