Acta Optica Sinica, Volume. 43, Issue 7, 0723002(2023)
High-Speed Hetero-Doped Silicon-Based Slot Waveguide Modulator
Fig. 4. Carrier distribution on pn junction cross section at 0 V and 2 V. (a) 0 V; (b) 2 V
Fig. 5. Optical transmission loss and phase shift under different bias voltages. (a) Optical transmission loss; (b) phase shift
Fig. 7. T-shape electrode structure (W=50 μm, T=12 μm, dgap=15 μm, P=90 μm) and equivalent circuit model of the loaded transmission line. (a) Electrode structure; (b) equivalent circuit model
Fig. 8. Simulated value of electrode equivalent circuit. (a) Capacitance per unit length; (b) inductance per unit length; (c) resistance per unit length; (d) loss per unit length
Fig. 9. Electrode impedance and refractive index with unloaded and loaded pn junction. (a) Impedance; (b) refractive index
Fig. 10. Electrode loss and 3 dB electro-optic bandwidth under different bias voltages. (a) Electrode loss; (b) electro-optic bandwidth
Fig. 11. Optical transmission spectra and modulation efficiency of 3 mm long modulator under different bias voltages. (a) Optical transmission spectra; (b) modulation efficiency
Fig. 12. 70 Gbit/s OOK modulation eye diagrams with Vpp=2 V. (a) Slot WG; (b) traditional rib WG
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Huajiang Yuan, Chonglei Sun, Jia Zhao. High-Speed Hetero-Doped Silicon-Based Slot Waveguide Modulator[J]. Acta Optica Sinica, 2023, 43(7): 0723002
Category: Optical Devices
Received: Sep. 27, 2022
Accepted: Nov. 25, 2022
Published Online: Apr. 6, 2023
The Author Email: Zhao Jia (zhaojia@sdu.edu.cn)