Boosting electroluminescence performance of all solution processed InP based quantum dot light emitting diodes using bilayered inorganic hole injection layers

Qiuyan Li; Sheng Cao; Peng Yu; Meijing Ning; Ke Xing; Zhentao Du; Bingsuo Zou; Jialong Zhao

doi:10.1364/PRJ.467604

Photonics Research, Volume. 10, Issue 9, 2133(2022)

Boosting electroluminescence performance of all solution processed InP based quantum dot light emitting diodes using bilayered inorganic hole injection layers

Qiuyan Li¹, Sheng Cao^1,2、*, Peng Yu¹, Meijing Ning¹, Ke Xing¹, Zhentao Du¹, Bingsuo Zou¹, and Jialong Zhao^1,3、*

Author Affiliations

¹School of Physical Science and Technology, MOE Key Laboratory of New Processing Technology for Non-ferrous Metals and Materials, Guangxi Universityhttps://ror.org/02c9qn167, Nanning 530004, China

²e-mail: caosheng@gxu.edu.cn

³e-mail: zhaojl@ciomp.ac.cn

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Qiuyan Li, Sheng Cao, Peng Yu, Meijing Ning, Ke Xing, Zhentao Du, Bingsuo Zou, Jialong Zhao, "Boosting electroluminescence performance of all solution processed InP based quantum dot light emitting diodes using bilayered inorganic hole injection layers," Photonics Res. 10, 2133 (2022)

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Paper Information

Category: Optical Devices

Received: Jun. 15, 2022

Accepted: Jul. 19, 2022

Published Online: Aug. 29, 2022

The Author Email: Sheng Cao (caosheng@gxu.edu.cn), Jialong Zhao (zhaojl@ciomp.ac.cn)

DOI:10.1364/PRJ.467604

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology