[1] [1] Daniel J. Ehrlich, Richard M. Osgood, Jr., T. F. Deutsch. Laser microphotochemistry for use in solid-state electronics. IEEE J. Quant. Electron., 1980, QE-16(11): 1233

[2] [2] A. Slaoui, F. Foulon, P. Siffert. Excimer laser induced doping of phosphorus into silicon. J. Appl. Phys., 1990, 67(10): 6197

[3] [3] F. Foulon, A. Slaoui, E. Fogarassy et al.. Optimization of the parameters involved in the photochemical doping of Si with a pulsed ArF excimer laser. Appl. Surf. Sci., 1989, 36: 384

[4] [4] D. J. Ehrlich, J. Y. Tao. Submicrometer-linewidth doping and relief definition in silicon by laser-controlled diffusion. Appl. Phys. Lett., 1982, 41(3): 297

[5] [5] A. Slaoui, F. Foulon, P. Siffert. Excimer laser induced doping of phosphorus into silicon. J. Appl. Phys., 1990, 67(10): 6197

[6] [6] P. Baeri, S. U. Campisano, G. Foti et al.. Arsenic diffusion in silicon melted by high-power nanosecond laser pulsing. Appl. Phys. Lett., 1978, 33(2): 137

[7] [7] D. Banerle. Laser processing and diagnostics, Springer Series in Chemical Physics. Berlin, Springer, 1984

[8] [8] D. J. Ehrlich, R. M. Osgood, Jr., T. F. Deutsch. Direct writing of regions of high doping on semiconductors by UV-laser photodeposition. Appl. Phys. Lett., 1980, 36(11): 916

[9] [9] G. G. Bentini, M. Bianconi, L. Correra et al.. Laser doping of silicon: role of the surface status in the incorporation mechanism. Appl. Surf. Sci., 1989, 36: 394

[10] [10] S. Kato, T. Nagahori, S. Matsumoto. ArF excimer laser doping of boron into silicon. J. Appl. Phys., 1987, 62(9): 3656

[11] [11] J. Narayan, R. T. Yong, R. F. Wood. P-N junction formation in boron-deposited silicon by laser-induced diffusion. Appl. Phys. Lett., 1978, 33(4): 338

[12] [12] K. Sera, F. Okumura, S. Kaneka. Excimer-laser doping into Si thin films. J. Appl. Phys., 1990, 67(5): 2359