Chinese Journal of Lasers, Volume. 52, Issue 5, 0501017(2025)

1950 nm Low‑Repetition‑Rate and High‑Energy Figure‑9 Picosecond Mode‑Locked Fiber Laser System Based on MOPA Configuration

Yongjian Pan1,2, Qiao Lu3, Hao Pan2, Dong Zhang2, and Ting Ma4、*
Author Affiliations
  • 1Anhui Provincial Key Laboratory of Photonic Devices and Materials, Anhui Institute of Optics and Fine Mechanics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, 230031Hefei , Anhui , China
  • 2University of Science and Technology of China, Hefei 230026, Anhui , China
  • 3School of Automation, Nanjing University of Information Science and Technology, Nanjing 210044, Jiangsu ,China
  • 4Shanghai Connet Laser Technology Co., Ltd., Shanghai 200240, China
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    References(31)

    [11] Huang T, Lin N, Zhang Q Y et al. Progress in semiconductor saturable absorption mirror mode-locked laser[J]. Laser & Optoelectronics Progress, 61, 0900008(2024).

    [15] Ye C X, Li J Z, Wang J T. Ultrafast erbium-doped fiber laser based on WTe2 saturable absorber[J]. Acta Optica Sinica, 44, 2014004(2024).

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    Yongjian Pan, Qiao Lu, Hao Pan, Dong Zhang, Ting Ma. 1950 nm Low‑Repetition‑Rate and High‑Energy Figure‑9 Picosecond Mode‑Locked Fiber Laser System Based on MOPA Configuration[J]. Chinese Journal of Lasers, 2025, 52(5): 0501017

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    Paper Information

    Category: laser devices and laser physics

    Received: Oct. 28, 2024

    Accepted: Dec. 31, 2024

    Published Online: Mar. 13, 2025

    The Author Email: Ting Ma (mt2013@mail.ustc.edu.cn)

    DOI:10.3788/CJL241293

    CSTR:32183.14.CJL241293

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