Journal of Semiconductors, Volume. 46, Issue 3, 032501(2025)

High quality 6-inch single-crystalline AlN template for E-mode HEMT power device

Zhiwen Liang1, Shangfeng Liu1,3,7, Ye Yuan1、*, Tongxin Lu1,7, Xiaopeng Li1, Zirong Wang6, Neng Zhang6, Tai Li1,7, Xiangdong Li2、**, Qi Wang5, Shengqiang Zhou4, Kai Kang6, Jincheng Zhang2,8, Yue Hao2,8, and Xinqiang Wang1,5,7、***
Author Affiliations
  • 1Songshan Lake Materials Laboratory, Dongguan 523808, China
  • 2Guangzhou Wide Bandgap Semiconductor Innovation Center, Guangzhou Institute of Technology, Xidian University, Guangzhou 510555, China
  • 3School of Physical Sciences, Great Bay University, Dongguan 523808, China
  • 4Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328, Dresden, Germany
  • 5Dongguan Institute of Opto-Electronics Peking University, Dongguan 523808, China
  • 6Sinopatt. Technology Co., Ltd, Songshan Lake, Dongguan 523808, China
  • 7State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Nano-Optoelectronics Frontier Center of Ministry of Education (NFC-MOE), Peking University, Beijing 100871, China
  • 8State Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology, School of Microelectronics, Xidian University, Xi’an 710071, China
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    Zhiwen Liang, Shangfeng Liu, Ye Yuan, Tongxin Lu, Xiaopeng Li, Zirong Wang, Neng Zhang, Tai Li, Xiangdong Li, Qi Wang, Shengqiang Zhou, Kai Kang, Jincheng Zhang, Yue Hao, Xinqiang Wang. High quality 6-inch single-crystalline AlN template for E-mode HEMT power device[J]. Journal of Semiconductors, 2025, 46(3): 032501

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    Paper Information

    Category: Research Articles

    Received: Oct. 30, 2024

    Accepted: --

    Published Online: Apr. 27, 2025

    The Author Email: Ye Yuan (YYuan), Xiangdong Li (XDLi), Xinqiang Wang (XQWang)

    DOI:10.1088/1674-4926/24100041

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