[1] [1] MANKOWSKI J, KRISTIANSEN M. A review of short pulse generator technology[J]. IEEE Transactions on Plasma Science, 2000, 28(1): 102-108. DOI: 10.1109/27.842875.

[2] [2] AKIYAMA H, SAKUGAWA T, NAMIHIRA T, et al. Industrial applications of pulsed power technology[J]. IEEE Transactions on Dielectrics and Electrical Insulation, 2007, 14(5): 1051-1064. DOI: 10.1109/TDEI.2007.4339465.

[3] [3] WANG Dongdong, QI Jian, LIU Kefu. All solid-state pulsed power generator with semiconductor and magnetic compression switches[J]. High Power Laser and Particle Beams, 2010, 22(4): 730. DOI: 10.1109/PPC.2009.5386270.

[4] [4] SHINOHE T, NAKAGAWA A, MINAMI Y, et al. Ultra high di/dtpulse switching of 2 500 V MOS assisted gate-triggered thyristors (MAGTs)[C]//Proceedings of the 2nd International Symposium on Power Semiconductor Devices and ICs. Tokyo, Japan: IEEE, 1990: 277-282. DOI: 10.1109/ISPSD.1990.991096.

[5] [5] IKEDA S, ARAKI T. The di/dtcapability of thyristors[J]. Proceedings of the IEEE, 1967, 55(8): 1301-1305.

[6] [6] O'BRIEN H, OGUNNYI A, SCOZZIE C J, et al. Development of 'stitch' super-GTOs for pulsed power[C]//2011 IEEE Pulsed Power Conference. Chicago, IL, USA: IEEE, 2011: 1108-1111.

[7] [7] CHEN Wanjun, LIU Chao, SHI Yijun, et al. Design and characterization of high di/dtCS-MCT for pulse power applications[J]. IEEE Transactions on Electron Devices, 2017, 64(10): 4206-4212. DOI: 10.1109/TED.2017.2736529.

[8] [8] LIU Chao, XING Pengcheng, ZHANG Shuyi, et al. Study on transient turn-on characteristics of pulse power thyristor-type devices under ultrahigh di/dtcondition[J]. IEEE Transactions on Electron Devices, 2023, 70(2): 640-646. DOI: 10.1109/TED.2022.3232320.

[9] [9] CHYNOWETH A G. Ionization rats for electrons and holes in silicon[J]. Physical Review, 1958(109): 1537-1545.

[10] [10] RAHMAN M T, KIMURA K, Fukami T, et al. A novel carrier accumulating structure for 1 200 V IGBTs without negative capacitance and decreasing breakdown voltage[C]//2018 IEEE the 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD). Chicago, IL, USA: IEEE, 2018: 491-494. DOI: 10.1109/ISPSD.2018.8393710.