A novel Avalanche Triggered MOS-Controlled Thyristor (AT-MCT) is proposed, which achieves high current peak, high current rise capability (di/dt), and non-activation protection in the non-operating state during capacitor pulse discharge. The device incorporates a highly doped N Avalanche Layer (N-AL) buried in a Pbody, with an N+ region near the cathode separated from the MOS structure. When a gate voltage is applied, the channel generated by the MOS transfers the potential of the N-drift region to the N-AL. The highly doped N-AL experiences avalanche due to the electric field peak, and the generated electron-hole pairs serve as the base current of the thyristor, enabling the AT-MCT to rapidly establish a self-feedback mechanism. Meanwhile, the positive feedback process established by the avalanche significantly improves the two-dimensional transient carrier transport effect, increases the effective conduction area of the cell during transient turn-on, and thus achieves more efficient energy conversion. The AT-MCT exhibits a 40% increase in current peak and a 31% increase in di/dt capability compared to Cathode-Shorted MCT (CS-MCT). Moreover, by designing the doping concentration of the N-AL, non-activation protection in the non-operating state can be realized, thereby enhancing the reliability of the pulsed power system.