Spectroscopic imaging ellipsometry (SIE) is used to characterize a nanofilm pattern on a solid substrate. The combination of a xenon lamp, a monochromator, and collimating optics is utilized to provide a probe beam with diameter of 25 mm, a charge-coupled device (CCD) camera with an imaging lens set and a lateral resolution in tens of microns is used as the detector. The sampling is approached by a rotating compensator at 8 seconds per wavelength. An 8–35-nm-thick stepped SiO2 on Si substrate is characterized in the range of 400–700 nm with a thickness resolution of approximate 0.2 nm.