[1] [1] PAUL M, SAMPATH KUMAR B, KARMEL NAGOTHU K, et al. Drain-extended FinFET with embedded SCR (DeFinFET-SCR) for high-voltage ESD protection and self-protected designs［J］. IEEE Transactions on Electron Devices, 2019, 66(12): 5072-5079.

[7] [7] SILVACO International. ATLAS user’s manual ［K］.Santa Clara,2010.

[8] [8] KLAASSEN D B M. A unified mobility model for device simulation—I. Model equations and concentration dependence［J］. Solid-State Electronics, 1992, 35(7): 953-959.

[9] [9] KLAASSEN D B M. A unified mobility model for device simulation—II. Temperature dependence of carrier mobility and lifetime［J］. Solid-State Electronics, 1992, 35(7): 961-967.

[10] [10] ARKHIPOV V I, EMELIANOVA E V, HEREMANS P, et al. Analytic model of carrier mobility in doped disordered organic semiconductors［J］. Physical Review B, 2005, 72(23): 235202.

[11] [11] ADLER M S, POSSIN G E. Achieving accuracy in transistor and thyristor modeling［J］. IEEE Transactions on Electron Devices, 1981, 28(9):1053-1059.