Researching | Long wavelength interband cascade photodetector with type II InAs/GaSb superlattice absorber

Journal of Semiconductors, Volume. 44, Issue 4, 042301(2023)

Long wavelength interband cascade photodetector with type II InAs/GaSb superlattice absorber

Shaolong Yan^1,2, Jianliang Huang^1,2、*, Ting Xue^1,2, Yanhua Zhang^1,2, and Wenquan Ma^1,2、**

Author Affiliations

¹The Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

²Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

show less

Full Text Get PDF

Figures&Tables (4)

References (23)

Paper Information

References(23)

[1] Y H Zhang, W Q Ma, Y L Cao et al. Long wavelength infrared InAs/GaSb superlattice photodetectors with InSb-like and mixed interfaces. IEEE J Quantum Electron, 47, 1475(2011).

[2] R Müller, V Gramich, M Wauro et al. High operating temperature InAs/GaSb type-II superlattice detectors on GaAs substrate for the long wavelength infrared. Infrared Phys Technol, 96, 141(2019).

[3] A Haddadi, S Ramezani-Darvish, G X Chen et al. High operability 1024 × 1024 long wavelength type-II superlattice focal plane array. IEEE J Quantum Electron, 48, 221(2012).

[4] S Maimon, G W Wicks. nBn detector, an infrared detector with reduced dark current and higher operating temperature. Appl Phys Lett, 89, 151109(2006).

[5] A Haddadi, G Chen, R Chevallier et al. InAs/InAs1−xSbx type-II superlattices for high performance long wavelength infrared detection. Appl Phys Lett, 105, 121104(2014).

[6] A Khoshakhlagh, S Myers, H Kim et al. Long-wave InAs/GaSb superlattice detectors based on nBn and pin designs. IEEE J Quantum Electron, 46, 959(2010).

[7] L A Treider, C P Morath, V M Cowan et al. Radiometric characterization of an LWIR, type-II strained layer superlattice pBiBn photodetector. Infrared Phys Technol, 70, 70(2015).

[8] D Z Y Ting, C J Hill, A Soibel et al. A high-performance long wavelength superlattice complementary barrier infrared detector. Appl Phys Lett, 95, 023508(2009).

[9] B M Nguyen, D Hoffman, P Y Delaunay et al. Dark Current suppression in type II InAs∕GaSb superlattice long wavelength infrared photodiodes with M-structure barrier. Appl Phys Lett, 91, 163511(2007).

[10] J R Meyer, I Vurgaftman, R Q Yang et al. Type-II and type-I interband cascade lasers. Electron Lett, 32, 45(1996).

[11] Y Zhou, X L Chai, Y Tian et al. Higher performance long wavelength interband cascade photodetector compared with a PBπBN device. Appl Phys Lett, 115, 083504(2019).

[12] L Lei, L Li, H Ye et al. Long wavelength interband cascade infrared photodetectors operating at high temperatures. J Appl Phys, 120, 193102(2016).

[13] Z Tian, R T Hinkey, R Q Yang et al. Interband cascade infrared photodetectors with enhanced electron barriers and p-type superlattice absorbers. J Appl Phys, 111, 024510(2012).

[14] R Q Yang, Z B Tian, Z H Cai et al. Interband-cascade infrared photodetectors with superlattice absorbers. J Appl Phys, 107, 054514(2010).

[15] H Ye, L Li, H Lotfi et al. Molecular beam epitaxy of interband cascade structures with InAs/GaSb superlattice absorbers for long-wavelength infrared detection. Semicond Sci Technol, 30, 105029(2015).

[16] R Q Yang, R T Hinkey. Ultimate detectivity of multiple-stage interband cascade infrared photodetectors. Appl Phys Lett, 118, 241101(2021).

[17] H Lotfi, L Li, L Lei et al. High-frequency operation of a mid-infrared interband cascade system at room temperature. Appl Phys Lett, 108, 201101(2016).

[18] Y J Chen, X L Chai, Z Y Xie et al. High-speed mid-infrared interband cascade photodetector based on InAs/GaAsSb type-II superlattice. J Light Technol, 38, 939(2020).

[19] B L Chen. Equivalent circuit model of the RF characteristics of multi-stage infrared photodetectors. J Lightwave Technol, 40, 5224(2022).

[20] P J Ker, A R J Marshall, A B Krysa et al. Temperature dependence of leakage current in InAs avalanche photodiodes. IEEE J Quantum Electron, 47, 1123(2011).

[21] Q K Yang, F Fuchs, J Schmitz et al. Investigation of trap-assisted tunneling current in InAs/(GaIn)Sb superlattice long-wavelength photodiodes. Appl Phys Lett, 81, 4757(2002).

[22] Y Zhou, J X Chen, Z C Xu et al. High quantum efficiency mid-wavelength interband cascade infrared photodetectors with one and two stages. Semicond Sci Technol, 31, 085005(2016).

[23] R Q Yang. Shot and Johnson noises in interband cascade infrared photodetectors. Appl Phys Lett, 121, 051105(2022).

Tools

Get Citation

Copy Citation Text

Shaolong Yan, Jianliang Huang, Ting Xue, Yanhua Zhang, Wenquan Ma. Long wavelength interband cascade photodetector with type II InAs/GaSb superlattice absorber[J]. Journal of Semiconductors, 2023, 44(4): 042301

Download Citation

EndNote(RIS)BibTex Plain Text

Set citation alerts for article

Save article for my favorites

Paper Information

Category: Articles

Received: Oct. 19, 2022

Accepted: --

Published Online: Apr. 24, 2023

The Author Email: Jianliang Huang (jlhuang@semi.ac.cn), Wenquan Ma (wqma@semi.ac.cn)

DOI:10.1088/1674-4926/44/4/042301

Topics

laser devices and laser physics

Lasers and Laser Optics

laser manufacturing

Instrumentation, Measurement and Metrology