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Journal of Synthetic Crystals, Volume. 49, Issue 11, 2206(2020)

New Type of Triangular Defects in 4HSiC 4° OffAxis Homoepitaxial Layers

HU Jichao1、*, WANG Xi1, JIA Renxu2, PU Hongbin1, and CHEN Zhiming1
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    HU Jichao, WANG Xi, JIA Renxu, PU Hongbin, CHEN Zhiming. New Type of Triangular Defects in 4HSiC 4° OffAxis Homoepitaxial Layers[J]. Journal of Synthetic Crystals, 2020, 49(11): 2206

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    Received: --

    Accepted: --

    Published Online: Jan. 26, 2021

    The Author Email: HU Jichao (jchu@xaut.edu.cn)

    DOI:

    CSTR:32186.14.

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology