Microelectronics, Volume. 51, Issue 3, 439(2021)

A GaN-Based High Voltage Schottky Barrier Diode with Double Heterojunction

HAN Chunlin1, SUN Tao2, and ZHOU Jianjun1
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  • 2[in Chinese]
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    HAN Chunlin, SUN Tao, ZHOU Jianjun. A GaN-Based High Voltage Schottky Barrier Diode with Double Heterojunction[J]. Microelectronics, 2021, 51(3): 439

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    Paper Information

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    Received: Sep. 8, 2020

    Accepted: --

    Published Online: Mar. 11, 2022

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    DOI:10.13911/j.cnki.1004-3365.200412

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