Chinese Journal of Lasers, Volume. 33, Issue suppl, 53(2006)
High Performance 1.3 μm InGaAsN Quantum Well Semiconductor Lasers
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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. High Performance 1.3 μm InGaAsN Quantum Well Semiconductor Lasers[J]. Chinese Journal of Lasers, 2006, 33(suppl): 53
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