[2] Man Y X, Zhong L, Ma X Y et al. Characteristic analysis of 975 nm tapered lasers with separated contacts[J]. Chinese Journal of Lasers, 48, 1701005(2021).

[3] He T J, Jing H Q, Zhu L N et al. Quantum well intermixing of 915 nm InGaAsP/GaAsP primary epitaxial wafers[J]. Acta Optica Sinica, 42, 0114003(2022).

[4] Yuan Q H, Jing H Q, Liu S P et al. Influence of guided wave mode on output characteristics of tapered diode laser[J]. Chinese Journal of Lasers, 48, 0901001(2021).

[5] Sprangle P, Hafizi B, Ting A et al. High-power lasers for directed-energy applications[J]. Applied Optics, 54, F201-F209(2015).

[6] Odriozola H. Tijero J M G, Esquivias I, et al. Design of 1060 nm tapered lasers with separate contacts[J]. Optical and Quantum Electronics, 40, 1123-1127(2008).

[7] Li J, Liu Y Y, Ma X Y. High-brightness tapered diode lasers emitting at 980 nm with electrically separated ridge waveguide and tapered section[J]. Chinese Journal of Semiconductors, 28, 1302-1306(2007).

[8] Yuan Q H, Jing H Q, Zhang Q Y et al. Development and applications of GaAs-based near-infrared high power semiconductor lasers[J]. Laser & Optoelectronics Progress, 56, 040003(2019).

[9] Li T, Hao E J, Li Z J et al. Optimization of waveguide structure for high power 1060 nm diode laser[J]. Journal of Infrared and Millimeter Waves, 31, 226-230(2012).

[10] Yang Y, Liu Y, Qin L et al. Electro-optic properties of 850 nm high-brightness tapered lasers[J]. Chinese Journal of Luminescence, 32, 593-597(2011).

[11] Ma X L, Qu H W, Zhao P C et al. 980 nm tapered lasers with photonic crystal structure for low vertical divergence[J]. Proceedings of SPIE, 10019, 1001907(2016).

[12] Sun S M, Fan J, Xu L et al. Progress of tapered semiconductor diode lasers[J]. Chinese Optics, 12, 48-58(2019).

[13] Borruel L, Esquivias I. Garcia-Tijero J M, et al. Design and fabrication of high brightness semiconductor tapered lasers with a clarinet-like shape[C]∥Conference on Lasers and Electro-Optics Europe, June 12-17, 2005, Munich, Germany., 115(2005).

[14] Dittmar F, Sumpf B, Fricke J et al. High-power 808-nm tapered diode lasers with nearly diffraction-limited beam quality of M2=1.9 at P=4.4 W[J]. IEEE Photonics Technology Letters, 18, 601-603(2006).

[15] Paschke K, Sumpf B, Dittmar F et al. Nearly diffraction limited 980-nm tapered diode lasers with an output power of 7.7 W[J]. IEEE Journal of Selected Topics in Quantum Electronics, 11, 1223-1227(2005).

[16] Sumpf B, Hülsewede R, Erbert G et al. High brightness 735 nm tapered lasers-optimisation of the laser geometry[J]. Optical and Quantum Electronics, 35, 521-532(2003).

[17] Jensen O B, Klehr A, Dittmar F et al. 808 nm tapered diode lasers optimized for high output power and nearly diffraction-limited beam quality in pulse mode operation[J]. Proceedings of SPIE, 6456, 64560A(2007).

[18] Borruel L, Sujecki S, Wykes J et al. Analysis of beam quality limitations in high brightness gain guided tapered lasers[C]∥Proceedings of the 4th International Conference on Numerical Simulation of Optoelectronic Devices, August 26, 2004, Santa Barbara, CA, USA., TuB27(2004).

[19] Li J, Ma X Y, Wang J. High-power ridge-waveguide tapered diode lasers at 14xx nm[J]. Chinese Journal of Semiconductors, 28, 108-112(2007).

[20] Guo C Z[M]. Semiconductor laser mode theory(1989).

[21] Borruel L, Odriozola H. Tijero J M G, et al. Design strategies to increase the brightness of gain guided tapered lasers[J]. Optical and Quantum Electronics, 40, 175-189(2008).

[22] Jiang J P[M]. Semiconductor laser(2000).