<trans-title xml:lang="en">Solution-prepared AgBi<sub>2</sub>I<sub>7</sub> Thin Films and Their Photodetecting Properties </trans-title>

Ying HU; Ziqing LI; Xiaosheng FANG

doi:10.15541/jim20220569

Journal of Inorganic Materials, Volume. 38, Issue 9, 1055(2023)

Solution-prepared AgBi₂I₇ Thin Films and Their Photodetecting Properties

Ying HU¹, Ziqing LI^2、*, and Xiaosheng FANG^1,2、*

¹1. State Key Laboratory of Molecular Engineering of Polymers, Department of Materials Science, Fudan University, Shanghai 200433, China

²2. Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai 200433, China

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Figures & Tables(12)

1. Experimental procedure of preparing AgBi₂I₇thin film by DMSO solvent

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2. (a) Crystal structure of AgBi₂I₇ and (b) six-coordinated silver-iodide octahedron sites

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3. XRD patterns of (a) ABI-Bx (x=10, 14, 18) and (b) ABI- Dy (y=14, 16, 18)

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4. SEM images of (a) ABI-B14 and (b) ABI-D16, and (c) UV-Vis absorption spectra of films from different precursors

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5. I-t and I-V curves of AgBi₂I₇thin films

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6. Device structure and photoelectric properties of AgBi₂I₇/GaN heterojunctions

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S1. Optical micrographs of AgBi₂I₇ thin films

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S2. SEM images of AgBi₂I₇ thin films

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S3. Tauc plots of (a) ABI-B14 and (b) ABI-D16

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S4. EQE of AgBi₂I₇/GaN heterojunctions

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Table 1. Photocurrents and dark currents of ABI-Bx (x=10, 14, 18) and ABI-Dy (y=14, 16, 18)
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Table 1. Photocurrents and dark currents of ABI-Bx (x=10, 14, 18) and ABI-Dy (y=14, 16, 18)
Sample Photocurrent/nA Dark current/nA On/Off ratio
ABI-B10 0.56 0.49 1.14
ABI-B14 2.60 1.88 1.38
ABI-B18 0.98 0.81 1.21
ABI-D14 0.19 0.18 1.06
ABI-D16 0.32 0.27 1.20
ABI-D18 0.35 0.30 1.20

Table 1. Summary of optoelectronic performances of typical lead-free perovskite photodetectors

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Table 1. Summary of optoelectronic performances of typical lead-free perovskite photodetectors

Photodetector	Light/nm	On/Off ratio	Responsivity/(A·W^-1)	Detectivity /Jones	Ref.
Ag-AgBi₂I₇-GaN-Ag	350	8.7×10⁵	27.51	1.53×10¹⁴	This work
Graphene-Cs₃Bi₂I₉-p-Si	650	>10²	23.6	1.75×10¹³	[1]
In-GaN-Cs₂AgBiBr₆-NiO-Au	365	1.16×10³	0.33	3.28×10¹¹	[2]
ITO-SnO₂-CsBi₃I₁₀-Au	650	2.33×10⁵	0.2	1.8×10¹³	[3]
Graphene-CsSnI₃-SnO₂-ITO	405	10⁴	0.237	1.18×10¹²	[4]
FTO-SnO₂-Ag₂BiI₅-carbon	473	6.25×10⁵	0.3	5.3×10¹²	[5]
ITO-SnO₂-Cs₃Bi₂I₉-PTAA-Au-ITO	405	5.7×10³	0.052	>10¹²	[6]
Au-CsCu₂I₃/GaN-In	325	1.1×10⁴	0.37	1.83×10¹³	[7]
Au-Cs₃Sb₂I₉-Au	450	5.5×10³	0.446	1.27 × 10¹¹	[8]

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Ying HU, Ziqing LI, Xiaosheng FANG. Solution-prepared AgBi₂I₇ Thin Films and Their Photodetecting Properties [J]. Journal of Inorganic Materials, 2023, 38(9): 1055

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Paper Information

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Received: Sep. 27, 2022

Accepted: --

Published Online: Mar. 6, 2024

The Author Email: Ziqing LI (lzq@fudan.edu.cn), Xiaosheng FANG (xshfang@fudan.edu.cn)

DOI:10.15541/jim20220569

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology

Table 1. Photocurrents and dark currents of ABI-Bx (x=10, 14, 18) and ABI-Dy (y=14, 16, 18)

Table 1. Photocurrents and dark currents of ABI-Bx (x=10, 14, 18) and ABI-Dy (y=14, 16, 18)

Table 1. Summary of optoelectronic performances of typical lead-free perovskite photodetectors

Table 1. Summary of optoelectronic performances of typical lead-free perovskite photodetectors